Strain distribution and electronic structures of the InAs/GaAs quantum ring molecule in an applied electric field

The strain distribution and electronic structures of the InAs/GaAs quantum ring molecule are calculated via the finite element method.In our model,three identical InAs quantum rings are aligned vertically and embedded in the cubic GaAs barrier.Considering the band edge modification induced by the strain,the electronic ground state and the dependence of ground state energy on geometric parameters of the quantum ring molecule are investigated.The change of localization of the wavefunction resulting from the applied electric field along the growth direction is observed.The ground state energy decreases as the electric field intensity increases in a parabolic-like mode.The electric field changes the monotonic dependence of the energy level on the inter-ring distance into a non-monotonic one.However,the electric field has no effect on the relationships between the energy level and other geometric parameters such as the inner radius and outer radius.