Aluminum film microdeposition at 775 nm by femtosecond laser-induced forward transfer

被引:0
|
作者
杨丽
王清月
倪晓昌
巫殷忠
贾威
柴路
机构
[1] Ministry of Education of China
[2] School of Precision Instruments and Optoelectronics Engineering
[3] School of Science Civil Aviation University of China
[4] Tianjin 300072 Key Laboratory of Optoelectronic Information Technical Science
[5] Tianjin 300300 Ultrafast Laser Laboratory
[6] Tianjin University
[7] Ultrafast Laser Laboratory
关键词
mode; nm; Aluminum film microdeposition at 775 nm by femtosecond laser-induced forward transfer;
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中图分类号
O484.1 [薄膜的生长、结构和外延];
学科分类号
摘要
Micro-deposit ion of an aluminum film of 500-nm thickness on a quartz substrate was demonstrated by laser-induced forward transfer (LIFT) using a femtosecond laser pulse. With the help of atomic force microscopy (AFM) and scanning electron microscopy (SEM), the dependence of the morphology of deposited aluminum film on the irradiated laser pulse energy was investigated. As the laser fluence was slightly above the threshold fluence, the higher pressure of plasma for the thicker film made the free surface of solid phase burst out, which resulted in that not only the solid material was sputtered but also the deposited film in the liquid state was made irregularly.
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页码:308 / 310
页数:3
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