High-response n-butanol gas sensor based on ZnO/In2O3 heterostructure

被引:0
|
作者
Zhen-Yu Yuan [1 ]
Fan Yang [1 ]
Hong-Min Zhu [1 ]
Fan-Li Meng [1 ]
Medhat Ibrahim [2 ]
机构
[1] College of Information Science and Engineering,Northeastern University
[2] Spectroscopy Department,National Research Centre
基金
中央高校基本科研业务费专项资金资助; 中国国家自然科学基金;
关键词
D O I
暂无
中图分类号
X965 [工业防毒]; X924.4 [安全控制技术]; TP212 [发送器(变换器)、传感器];
学科分类号
080202 ; 0837 ; 100402 ;
摘要
In this study,ZnO/In2O3-heterostructured nanosheets were prepared using a one-step hydrothermal method.The effects of ZnO content on the gas-sensing performance were discussed,with ZnO/In2O3-2 exhibiting the highest performance among the prepared sensors.The response of ZnO/In2O3-2 to n-butanol was 302 at 26℃,which was 11.93 times higher than that of pure In2O3.Among the eight tested gases,ZnO/In2O3-2 displayed the highest response to n-butanol.Moreover,the lower detection limit of the ZnO/In2O3nanosheets was reduced from 10 × 10-6to 0.1 × 10-6(for pure In2O3nanosheets)toward n-butanol.This is because the doping of Zn2+increases the number of oxygen vacancies on the sensor surface and allows the formation of an n-n heterostructure between ZnO and In2O3,which increases the initial resistance of the sensor.
引用
收藏
页码:198 / 209
页数:12
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