InP衬底上LP-MOCVD生长InAs自组装量子点

被引：1

作者：

王本忠

刘式墉

赵方海

孙洪波

彭宇恒

李正廷

机构：

[1] 集成光电子学国家重点联合实验室吉林大学实验区吉林大学电子工程系!长春

[2] 不详

[3] 集成光电子学国家重点联合实验室

来源：

关键词：

砷化铟自组装量子点; 低压金属有机化学气相沉积; 磷化铟衬底;

D O I：

暂无

中图分类号：

O657.3 [光化学分析法（光谱分析法）];

学科分类号：

摘要：

报道利用低压金属有机化学气相沉积（LP－MOCVD）技术在（001）InP衬底上生长InAs自组装量子点的结果，用光致发光技术观察到较强的室温光荧光谱，其峰值波长约为1603um，分布在1300um1700um范围内，半高峰宽为80meV

引用

页码：70 / 72

页数：3

共 7 条

[1] Molecular Beam Epitaial Growth of InSb, GaSh, and AlSb Nanometer-scale Dots on GaAs. Bennett B R,Magno R,Shanabrook B V. Applied Physics Letters . 1996
[2] Strain in InAs Islands Grown on InP(001) Analyzed by Raman Spectroscopy. Groenen J,Mlayah A,Caries R. Applied Physics Letters . 1996
[3] InAs Self-assembled Quantum Dots on InP by Molecular Beam Lpi-taxy. Fafard S,Wasilewski Z,McCaffrey J,et al. Applied Physics Letters . 1996
[4] Self-formd InGaAs Quantum Dot Lasers with Multi-stacked Dot Layer. Shoji H,Nakata Y,Mukai K,et al. Japanese Journal of Applied Physics . 1996
[5] Photoluminescence of Single InAs Quantum Dots Obtained by Self-orga-nized Growth on GaAs. Marzin J Y,Gerard J M,Izrael A,et al. Physical Review Letters . 1994
[6] Self-organization Processes of InGsAs/uaAs Quantum DotsGrown by Metalorganic Chemical Vapor Deposition. Heinrichsdorff F,Krost A,Grungmann M,et al. Applied Physics Letters . 1996
[7] Structural and Optical Behavior of Strained InAs Quantum BoxesGrown on Planar and Patterned GaAs(100) Substrtes by Molecular-beem Epitaxy. Xie Qianghua,Konkar A,Kalburge A,et al. Journal of Vacuum Science and Technology . 1995