Effect of a Single Threading Dislocation on Electrical and Single Photon Detection Characteristics of 4H-SiC Ultraviolet Avalanche Photodiodes

被引：0
|
作者：
苏琳琳 [1 ]
周东 [1 ]
刘清 [1 ]
任芳芳 [1 ]
陈敦军 [1 ]
张荣 [1 ]
郑有炓 [1 ]
陆海 [1 ]
机构：
[1] School of Electronic Science and Engineering, Nanjing University
来源：
Chinese Physics Letters | 2020年 / 06期
基金：
国家重点研发计划; 中国国家自然科学基金;
关键词：
D O I：
暂无
中图分类号：
TN312.7 [];
学科分类号：
0803 ;
摘要：
We fabricated 4H-SiC ultraviolet avalanche photodiode（APD） arrays and systematically investigated the effect of threading dislocations on electrical and single photon detection characteristics of 4H-SiC APDs. Based on a statistical correlation study of individual device performance and structural defect mapping revealed by molten KOH etching, it is determined with high confidence level that even a single threading dislocation within APD active region would lead to apparent device performance degradation, including increase of dark current near breakdown voltage, premature breakdown and reduction of single photon detection efficiency at fixed dark count rate.
引用
收藏
页码：157 / 160
页数：4
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