Review of encapsulation materials for AlGaN-based deep-ultraviolet light-emitting diodes

被引:0
|
作者
YOSUKE NAGASAWA [1 ]
AKIRA HIRANO [1 ]
机构
[1] UV Craftory Co.,Ltd.
关键词
CF; PDD; Review of encapsulation materials for AlGaN-based deep-ultraviolet light-emitting diodes; AlGaN;
D O I
暂无
中图分类号
TN312.8 [];
学科分类号
0803 ;
摘要
This paper reviews and introduces the techniques for boosting the light-extraction efficiency(LEE) of AlGaNbased deep-ultraviolet(DUV: λ < 300 nm) light-emitting diodes(LEDs) on the basis of the discussion of their molecular structures and optical characteristics, focusing on organoencapsulation materials. Comparisons of various fluororesins, silicone resin, and nonorgano materials are described. The only usable organomaterial for encapsulating DUV-LEDs is currently considered to be polymerized perfluoro(4-vinyloxy-1-butene)(p-BVE)terminated with a —CF;end group. By forming hemispherical lenses on DUV-LED dies using p-BVE having a —CF;end group with a refractive index of about 1.35, the LEE was improved by 1.5-fold, demonstrating a cost-feasible packaging technique.
引用
收藏
页码:812 / 822
页数:11
相关论文
共 50 条
  • [1] Review of encapsulation materials for AlGaN-based deep-ultraviolet light-emitting diodes
    YOSUKE NAGASAWA
    AKIRA HIRANO
    [J]. Photonics Research., 2019, 7 (08) - 822
  • [2] Review of encapsulation materials for AlGaN-based deep-ultraviolet light-emitting diodes
    Nagasawa, Yosuke
    Hirano, Akira
    [J]. PHOTONICS RESEARCH, 2019, 7 (08) : B55 - B65
  • [3] AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes
    Hirayama, Hideki
    Kamata, Norihiko
    Tsubaki, Kenji
    [J]. III-NITRIDE BASED LIGHT EMITTING DIODES AND APPLICATIONS, 2ND EDITION, 2017, 133 : 267 - 299
  • [4] A Review of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes on Sapphire
    Nagasawa, Yosuke
    Hirano, Akira
    [J]. APPLIED SCIENCES-BASEL, 2018, 8 (08):
  • [5] Polarization Effect in AlGaN-based deep-ultraviolet light-emitting diodes
    [J]. Kuo, Yen-Kuang (ykuo@cc.ncue.edu.tw), 1600, Institute of Electrical and Electronics Engineers Inc., United States (53):
  • [6] Light Extraction Efficiency Optimization of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes
    Wan, Hui
    Zhou, Shengjun
    Lan, Shuyu
    Gui, Chengqun
    [J]. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2020, 9 (04)
  • [7] AlGaN deep-ultraviolet light-emitting diodes
    Zhang, JP
    Hu, XH
    Lunev, A
    Deng, JY
    Bilenko, Y
    Katona, TM
    Shur, MS
    Gaska, R
    Khan, MA
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (10): : 7250 - 7253
  • [8] Ring geometric effect on the performance of AlGaN-based deep-ultraviolet light-emitting diodes
    Zhao, Jie
    Li, Qixin
    Tan, Qilong
    Liang, Tianhong
    Zhou, Wen
    Liu, Ningyang
    Chen, Zhitao
    [J]. OPTICS EXPRESS, 2024, 32 (02) : 1275 - 1285
  • [9] Sidewall geometric effect on the performance of AlGaN-based deep-ultraviolet light-emitting diodes
    Peng, Kang-Wei
    Tseng, Ming-Chun
    Lin, Su-Hui
    Lai, Shaoqiang
    Shen, Meng-Chun
    Wu, Dong-Sing
    Horng, Ray-Hua
    Chen, Zhong
    Wu, Tingzhu
    [J]. OPTICS EXPRESS, 2022, 30 (26): : 47792 - 47800
  • [10] Improved Turn-On and Operating Voltages in AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes
    Hao, Guo-Dong
    Taniguchi, Manabu
    Tamari, Naoki
    Inoue, Shin-ichiro
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 2017, 46 (10) : 5677 - 5683