Effect of Back Diffusion of Mg Dopants on Optoelectronic Properties of InGaN-Based Green Light-Emitting Diodes

被引：0
|
作者：
张宁 [1 ]
魏学成 [1 ]
路坤熠 [2 ]
冯梁森 [1 ]
杨杰 [1 ]
薛斌 [1 ]
刘喆 [1 ]
李晋闽 [1 ]
王军喜 [1 ]
机构：
[1] Research and Development Center for Semiconductor Lighting,Chinese Academy of Sciences
[2] Electronic Information School,Wuhan University
来源：
Chinese Physics Letters | 2016年 / 11期
基金：
中国国家自然科学基金;
关键词：
LEDs; in; it; as; InGaN; Effect of Back Diffusion of Mg Dopants on Optoelectronic Properties of InGaN-Based Green Light-Emitting Diodes; of; on;
D O I：
暂无
中图分类号：
TN312.8 [];
学科分类号：
0803 ;
摘要：
The effect of back-diffusion of Mg dopants on optoelectronic characteristics of InGaN-based green light-emitting diodes（LEDs） is investigated.The LEDs with less Mg back-diffusion show blue shifts of longer wavelengths and larger wavelengths with the increasing current,which results from the Mg-dopant-related polarization screening.The LEDs show enhanced efficiency with the decreasing Mg back-diffusion in the lower current region.Light outputs follow the power law L ∝ I;,with smaller parameter m in the LEDs with less Mg back-diffusion,indicating a lower density of trap states.The trap-assisted tunneling current is also suppressed by reducing Mgdefect-related nonradiative centers in the active region.Furthermore,the forward current-voltage characteristics are improved.
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页码：100 / 102
页数：3
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