含NiTi阻挡层的硅基(La0.5Sr0.5)CoO3/Pb(Zr0.4Ti0.6)O3/(La0.5Sr0.5)CoO3铁电电容器异质结

被引：1
|
作者：
刘保亭
闫小兵
程春生
李锋
马良
赵庆勋
闫正
机构：
[1] 河北大学物理科学与技术学院
[2] 河北大学物理科学与技术学院 保定071002
来源：
人工晶体学报 | 2007年 / 01期
基金：
教育部留学回国人员科研启动基金;
关键词：
铁电存储器; NiTi; 阻挡层; Pb(ZrxTi1-x)O3;
D O I：
10.16553/j.cnki.issn1000-985x.2007.01.035
中图分类号：
O484.42 [];
学科分类号：
080501 ; 1406 ;
摘要：
应用磁控溅射法制备的非晶NiTi薄膜作阻挡层,在Si(100)衬底上构造了(La0.5Sr0.5)CoO3/Pb(Zr0.4Ti0.6)O3/(La0.5Sr0.5)CoO3(LSCO/PZT/LSCO)铁电电容器异质结,研究了Pb(Zr0.4Ti0.6)O3铁电薄膜的结构和物理性能。实验发现LSCO/PZT/LSCO铁电电容器具有良好的电学性能,在417kV/cm的驱动场强下,PZT铁电电容器具有较低的矫顽场强(125kV/cm)和较高的剩余极化强度(19.0μC/cm2),良好电容-电压特性(C-V)和保持特性,铁电电容器经过1010次反转后,极化强度没有明显下降,表明了非晶NiTi薄膜可以用作高密度硅基铁电存储器的扩散阻挡层。
引用
收藏
页码：157 / 160
页数：4
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