C-V and DLTS studies of Al/Ta2O5/n-Si structures with Ta2O5 thin films deposited by pulsed laser deposition

被引：0
|
作者：
张胜坤
付正文
柯炼
秦启宗
陆方
王迅
机构：
[1] China)
[2] Fudan University
[3] Shanghai 200433
[4] State Key Laboratory of Surface Physics
来源：
Progress in Natural Science:Materials International | 1998年 / 02期
关键词：
dielectric constant; interface states; anneal;
D O I：
暂无
中图分类号：
O484 [薄膜物理学];
学科分类号：
080501 ; 1406 ;
摘要：
Compared with SiO2and Si3N4used in the conventional MOS technology, tantalum pentoxide has unique advantages due to its high dielectric constant (εTa2O5=25, εSiO2=4, εSi3N4=7),high resistivity, low internal stress and good resistance to high voltage. So it has potential applications in integration technology. So far Ta2O5films have been fabricated by various methods such, as reactive sputtering deposition, low-pressure chemical vapor deposition (LPCVD),
引用
收藏
页码：116 / 121
页数：6
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