Physical Vapor Deposition of High-Mobility P-Type Tellurium and Its Applications for Gate-Tunable van der Waals PN Photodiodes

被引：0

作者：

Huang, Tianyi ^{[1
]}

Lin, Sen ^{[2
]}

Zou, Jingyi ^{[2
]}

Wang, Zexiao ^{[1
]}

Zhong, Yibai ^{[1
]}

Li, Jingwei ^{[2
]}

Wang, Ruixuan ^{[2
]}

Wang, Zhixing ^{[2
]}

St Luce, Kevin ^{[2
]}

Kim, Rex ^{[2
]}

Cui, Jianzhou ^{[2
]}

Wang, Han ^{[3
]}

Li, Qing ^{[2
]}

Xu, Min ^{[2
,4
]}

Shen, Sheng ^{[1
,2
,5
]}

Zhang, Xu ^{[1
,2
]}

机构：

[1] Carnegie Mellon Univ, Dept Mech Engn, Pittsburgh, PA 15213 USA

[2] Carnegie Mellon Univ, Dept Elect & Comp Engn, Pittsburgh, PA 15213 USA

[3] Univ Southern Calif, Ming Hsieh Dept Elect & Comp Engn, Los Angeles, CA 90089 USA

[4] Carnegie Mellon Univ, Sch Comp Sci, Ray & Stephanie Lane Computat Biol Dept, Pittsburgh, PA 15213 USA

[5] Carnegie Mellon Univ, Dept Mat Sci & Engn, Pittsburgh, PA 15213 USA

来源：

ACS APPLIED MATERIALS & INTERFACES | 2024年 / 17卷 / 01期

基金：

美国国家科学基金会; 美国安德鲁·梅隆基金会;

关键词：

gate-tunable; van der Waals materials; heterojunction; PN diodes; high mobility; photodetectors; tellurium; FIELD-EFFECT TRANSISTORS; PHOSPHORUS; FILMS;

D O I：

10.1021/acsami.4c14865

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Recently, tellurium has attracted resurgent interest due to its outstanding p-type characteristics and ambient environmental stability. Here, we present a substrate engineering-based physical vapor deposition method to synthesize high-quality Te nanoflakes and achieved a field-effect hole mobility of 1450 cm2/(V s), which is, to the best of our knowledge, the highest among existing synthesized two-dimensional p-type semiconductors. The high mobility of Te enables the fabrication of Te/MoS2 PN diodes with highly gate-tunable characteristics. The Te/MoS2 heterostructure is demonstrated to be used as visible-light photodetectors with a current responsivity up to 630 A/W, which is about 1 order of magnitude higher than one achieved using p-type Si-MoS2 PN photodiodes. The photoresponse of Te/MoS2 heterojunctions also exhibits strong gate tunability due to their ultrathin thickness and unique band alignment. The successful synthesis of high-mobility Te and its integration into Te/MoS2 photodiodes show promise for the development of highly tunable and multifunctional photodetectors.

引用

页码：1861 / 1868

页数：8

共 2 条

[1] GeAs as an emerging p-type van der Waals semiconductor and its application in p-n photodiodes
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NANOTECHNOLOGY, 2023, 34 (31)
[2] Rapid Vapor-Phase Deposition of High-Mobility p-Type Buffer Layers on Perovskite Photovoltaics for Efficient Semitransparent Devices
Jagt, Robert A.
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Roose, Bart
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Li, Weiwei
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MacManus-Driscoll, Judith L.
Hoye, Robert L. Z.
ACS ENERGY LETTERS, 2020, 5 (08) : 2456 - 2465

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