Novel precursor for the preparation of vanadium sulfide layers with atomic layer deposition

被引：0
|
作者：
Baji, Zsofia [1 ]
Fogarassy, Zsolt [1 ]
Sulyok, Attila [1 ]
Horvath, Zsolt Endre [1 ]
Szabo, Zoltan [1 ]
机构：
[1] Ctr Energy Res, 29-33 Konkoly Thege Str, H-1121 Budapest, Hungary
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2025年 / 43卷 / 02期
关键词：
D O I：
10.1116/6.0004127
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The present paper reports on the atomic layer deposition of vanadium sulfide (VS) layers from tetrakis(ethylmethylamino)vanadium and H2S. The deposition of VS layers with these precursors has proven possible between 200 and 300 degrees C. The prepared layers were amorphous, but a postdeposition annealing in H2S atmosphere yielded crystalline VS layers. The use of this precursor combination has so far not been reported.
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页数：7
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