Optoelectronic and transport response of double perovskites Na2AuMX6 (M = Al, Ga, and X = Br, I) for energy harvesting: A DFT investigation

被引:0
|
作者
Ayyaz, Ahmad [1 ]
Albaqawi, Hissah Saedoon [2 ]
Hedhili, Fekhra [2 ,3 ]
Mahmood, Q. [4 ,5 ]
Al-Shomar, Shereen M. [2 ]
Al-Shammari, Nwuyer A. [2 ]
机构
[1] GC Univ Lahore, Ctr Adv Studies Phys, Lahore 54000, Pakistan
[2] Univ Hail, Coll Sci, Dept Phys, POB 2440, Hail, Saudi Arabia
[3] Al Manar Univ, Fac Sci, Dept Phys, Tunis 1060, Tunisia
[4] Imam Abdulrahman Bin Faisal Univ, Basic & Appl Sci Res Ctr, POB 1982, Dammam 31441, Saudi Arabia
[5] Imam Abdulrahman Bin Faisal Univ, Coll Sci, Dept Phys, POB 1982, Dammam 31441, Saudi Arabia
关键词
Halide Double Perovskite; DFT; Direct band gap; Absorption; Figure of merit; METAL HALIDE PEROVSKITES; LEAD-FREE; THERMOELECTRIC PROPERTIES; THERMODYNAMIC PROPERTIES; CS2AGBIX6; X; SOLAR-CELLS; BAND-GAP; CL; SEMICONDUCTORS;
D O I
10.1016/j.mseb.2025.118133
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In the current article, the structural configuration, elastic behaviour, optoelectronic response, as well as thermoelectric features of the novel double perovskites Na2AuMX6 (M = Al, Ga, and X = Br, I) have been thoroughly investigated. The stability in the cubic phase of Na2AuAlBr6, Na2AuAlI6, Na2AuGaBr6, and Na2AuGaI6 has been verified by tolerance factor prediction. The elastic factors have proposed the mechanical stability, ductility, and anisotropic response of the investigated compounds. The electronic attributes computations verified the existence of a direct band gap (Eg). The compounds Na2AuAlBr6, Na2AuAlI6, Na2AuGaBr6, and Na2AuGaI6 have an Eg of 1.82 eV, 0.45 eV, 1.53 eV, and 0.22 eV, respectively. This study further specifically emphasizes the screening of photon absorption, polarizability, refraction of light, reflection, and loss factor. The optical characteristics of Na2AuAlBr6 and Na2AuGaBr6 are suitable for solar cells due to the visible light absorption features. Meanwhile, the optical aspects of Na2AuAlI6 and Na2AuGaI6 are compatible with optoelectronic applications due to infrared absorption of light. The thermoelectric features are obtained using the BoltzTraP code, which showed that the highest ZT values are ascertained to be 0.79, 0.76, 0.71, and 0.76, respectively, for the studied materials. Based on this analysis, these materials have provided theoretical evidence and future recommendations for implications in solar cells, optoelectronics, and thermoelectric technologies.
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页数:12
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