Synthesis and Characterizations of a Nonalkyl Tin Oxo Cluster and its Application as High EUV Absorption Coefficient and Etch Resistant Inorganic Resist for EUV Lithography

被引：0

作者：

Yun, Hyeok ^{[1
]}

Heo, Soyeong ^{[1
]}

Bang, Jiyoung ^{[1
]}

Kim, Minyeob ^{[1
]}

Moon, Hyung-Bae ^{[2
]}

Noh, Siwoo ^{[3
]}

Kim, Geonhwa ^{[3
]}

Lee, Hee-Seon ^{[4
]}

Heo, Kyuyoung ^{[4
]}

Lee, Sangsul ^{[3
]}

Kim, Ki-Jeong ^{[3
]}

Kim, Cheol-Min ^{[2
]}

Jeong, Hyun-Dam ^{[1
]}

机构：

[1] Chonnam Natl Univ, Dept Chem, Gwangju 61186, South Korea

[2] 4Chem Lab, Suwon 16229, South Korea

[3] POSTECH, Pohang Accelerator Lab, Pohang 37673, South Korea

[4] Korea Res Inst Chem Technol, Daejeon 34114, South Korea

来源：

INORGANIC CHEMISTRY | 2025年 / 64卷 / 10期

基金：

新加坡国家研究基金会;

关键词：

DESORPTION MASS-SPECTROMETRY; HIGH-RESOLUTION; BASIS-SETS; OXIDE; PHOTORESISTS; REFLECTION; GENERATION; TOXICITY; DESIGN; ACID;

D O I：

10.1021/acs.inorgchem.5c00495

中图分类号：

O61 [无机化学];

学科分类号：

070301 ; 081704 ;

摘要：

We introduce a novel nonalkyl tin oxo cluster, CNU-TOC-01(4C-C), synthesized through a reflux-based solution reaction using SnCl2, H2O, and pyrazole, which permits scalable production and molecular customization. Using field desorption-time-of-flight mass spectrometry (FD-TOF MS) and small-angle X-ray scattering (SAXS), CNU-TOC-01(4C-C) is characterized as a cyclic cluster with the molecular formula Sn4Cl3(C3N2H4)(C3N2H3)H4O8. The cluster size was measured to be 11.6 & Aring; by SAXS and estimated to be 11.1 & Aring; lengthwise in quantum chemical calculation. The synthesized material exhibits an extreme ultraviolet (EUV) linear absorption coefficient of 20.7 mu m-1. Initial application in EUVL and electron beam lithography (EBL) achieved fine line and space patterns with the potential for ultrafine resolutions upon optimization. CNU-TOC-01(4C-C)'s high etch resistance underscores its exceptional suitability as an advanced resist material for future lithographic applications.

引用

页码：5302 / 5321

页数：20