A high-Tc superconducting diode with large current carrying capacity

被引:0
|
作者
Brooks, J. M. [1 ]
Mataira, R. [1 ]
Simpson, T. [1 ]
Badcock, R. A. [1 ,2 ]
Bumby, C. W. [1 ,3 ]
机构
[1] Victoria Univ Wellington, Paihau Robinson Res Inst, 76 Sydney St, Lower Hutt 5012, New Zealand
[2] Dodd Walls Ctr Photon & Quantum Technol, Te Whai Ao, Dunedin 9016, New Zealand
[3] Victoria Univ Wellington, MacDiarmid Inst Adv Mat & Nanotechnol, Wellington 6140, New Zealand
关键词
D O I
10.1063/5.0248777
中图分类号
O59 [应用物理学];
学科分类号
摘要
Superconducting diodes enable lossless current flow in one direction and could serve in a variety of applications similar to their semiconductor counterparts, such as current rectification, temperature sensing, and logic circuits. However, no superconducting diodes reported in the literature have a forward current carrying capacity exceeding 1 A, and hence are not suitable for use in superconducting power applications. Here, we present a high- T-c superconducting diode that leverages permanent magnets to induce an asymmetry in the critical current of a superconducting coated conductor upon current reversal. The magnets are arranged to replicate the self-field of the conductor at I-c, causing constructive or destructive interference with the transport current's self-field depending on the current direction. This interference generates asymmetric internal magnetic field distributions, leading to the directional suppression of the critical current density and a diode effect. We demonstrate Delta I-c values > 150 A and a half-wave transformer rectifier using a single high- T-c flux diode submerged in liquid nitrogen, which rectifies 30 A into a 220 mu H superconducting magnet. (c) 2025 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution-NonCommercialNoDerivs 4.0 International (CC BY-NC-ND) license (https://creativecommons.org/licenses/by-nc-nd/4.0/).
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页数:6
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