Demonstration of bipolar resistance switching characteristics of sol-gel derived BaOx resistive memory

Resistance switching (RS) characteristics of Ba-related compounds such as BaTiOx and BaZrOx have been widely reported in literature. However, resistive random-access memory (RRAM) fabricated using a BaOx film as an RS layer is still unexplored. In this article, we use a sol-gel derived BaOx RS layer to realize a Cu/BaOx/n(+)-Si bipolar RRAM. The RS behavior is highly sensitive to annealing temperature of the BaOx film. The as-fabricated BaOx device shows a superior insulation property with a breakdown voltage of similar to 45 V, and RS behavior is not observed. Nevertheless, for the device fabricated using 300 degrees C-annealed BaOx film as the RS layer, significant bipolar RS feature with write and erase voltages of 4.8 and-1.58 V can be obtained. In addition, the RRAM exhibits a memory window of 10(6), which is larger than those of bipolar RRAMs reported recently. Resistance switching mechanism and carrier transport behavior are investigated and evidenced by I-V measurement, curve analysis, and material analyses. Stability and read-disturb immunity at 25 and 85 degrees C are examined. Erase and write speeds are also explored.