Combined approach of patterning on SiO2/Si substrate using ion beam and chemical wet etching

In this work, we studied the influence of combined processing of SiO2/Si(001) substrates using focused ion beams (FIB) and wet chemical etching on the possibility of forming pyramidal cavities and their geometric parameters. It has been shown that etching FIB-modified samples only in KOH leads to the formation of pyramidal cavities covered with a shell, possibly made of porous silicon layer. We have shown that the use of an isotropic etchant before anisotropic etching allows to remove a porous silicon layer. An increase in the implantation dose led not only to an increase in the depth of the cavities, but also to an increase in the undercut of the oxide layer.