The Influence of Etching Method on the Occurrence of Defect Levels in III-V and II-VI Materials

被引：0

作者：

Majkowycz, Kinga ^{[1
]}

Murawski, Krzysztof ^{[1
]}

Kopytko, Malgorzata ^{[1
]}

Nowakowski-Szkudlarek, Krzesimir ^{[2
]}

Witkowska-Baran, Marta ^{[2
]}

Martyniuk, Piotr ^{[1
]}

机构：

[1] Mil Univ Technol, Inst Appl Phys, 2 Kaliskiego St, PL-00908 Warsaw, Poland

[2] VIGO Photon SA, 129-133 Poznanska St, PL-05850 Ozarow Mazowiecki, Poland

来源：

NANOMATERIALS | 2024年 / 14卷 / 19期

关键词：

DLTS; MOCVD; MBE; MCT; T2SL; wet etching; ICP RIE; mixed etching; DEEP-LEVEL; MECHANISMS; ENERGY; LAYERS;

D O I：

10.3390/nano14191612

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The influence of the etching method on the occurrence of defect levels in InAs/InAsSb type-II superlattice (T2SLs) and MCT photodiode is presented. For both analyzed detectors, the etching process was performed by two methods: wet chemical etching and dry etching using an ion beam (RIE-reactive ion etching). The deep-level transient spectroscopy (DLTS) method was used to determine the defect levels occurring in the analyzed structures. The obtained results indicate that the choice of etching method affects the occurrence of additional defect levels in the MCT material, but it has no significance for InAs/InAsSb T2SLs.

引用

页数：9

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