The fundamental understanding of the driving mechanism of dipolar ordering in complex perovskite oxides (ABO3) and its dependence on the degree of doping as well as on the type of dopant is critical for the effective design of novel functional materials with desired properties. To elucidate the temperature-induced transformations in mixed lead-bismuth systems, we have studied two solid solutions with a morphotropic phase boundary (MPB), (1 - x)PbTiO3-xBiNi0.5Ti0.5O3 (PT-xBNT) and (1 - x)PbTiO3-xBiMg0.5Ti0.5O3 (PT-xBMT), by Raman spectroscopy and second-harmonic generation (SHG). The temperature evolution of atomic dynamics in both PT-xBNT and PT-xBMT shows that the paraelectric-to-ferroelectric phase transition at the MPB does not involve any dynamical instability, indicating the dominance of order-disorder transformation processes. The temperature dependence of the SHG intensity reveals that the MPB can be identified by the smallest size of the preexisting intrinsic ferroic entities that on cooling merge to form a ferroelectric state with a macroscopic polarization. The difference between Ni- and Mg-containing solid solutions is merely in the correlation length of local structural distortions.
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Univ Arkansas, Dept Phys, Fayetteville, AR 72701 USA
S China Univ Technol, Dept Phys, Guangzhou 510640, Peoples R ChinaUniv Arkansas, Dept Phys, Fayetteville, AR 72701 USA
Fu, Xiujun
Naumov, Ivan I.
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Univ Arkansas, Dept Phys, Fayetteville, AR 72701 USA
Carnegie Inst Sci, Geophys Lab, Washington, DC 20015 USAUniv Arkansas, Dept Phys, Fayetteville, AR 72701 USA
Naumov, Ivan I.
Fu, Huaxiang
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Univ Arkansas, Dept Phys, Fayetteville, AR 72701 USAUniv Arkansas, Dept Phys, Fayetteville, AR 72701 USA
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Shanghai Normal Univ, Dept Phys, Key Lab Optoelect Mat & Device, Shanghai 200234, Peoples R China
Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Devices, Shanghai 201800, Peoples R ChinaShanghai Normal Univ, Dept Phys, Key Lab Optoelect Mat & Device, Shanghai 200234, Peoples R China
Xiao, Junjie
Liu, Sixing
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Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Devices, Shanghai 201800, Peoples R ChinaShanghai Normal Univ, Dept Phys, Key Lab Optoelect Mat & Device, Shanghai 200234, Peoples R China
Liu, Sixing
Wang, Jushan
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Shanghai Normal Univ, Dept Phys, Key Lab Optoelect Mat & Device, Shanghai 200234, Peoples R ChinaShanghai Normal Univ, Dept Phys, Key Lab Optoelect Mat & Device, Shanghai 200234, Peoples R China
Wang, Jushan
Xu, Jialin
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Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Devices, Shanghai 201800, Peoples R ChinaShanghai Normal Univ, Dept Phys, Key Lab Optoelect Mat & Device, Shanghai 200234, Peoples R China
Xu, Jialin
Zhang, Zhang
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Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Devices, Shanghai 201800, Peoples R ChinaShanghai Normal Univ, Dept Phys, Key Lab Optoelect Mat & Device, Shanghai 200234, Peoples R China
Zhang, Zhang
Wang, Xi'an
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Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Devices, Shanghai 201800, Peoples R ChinaShanghai Normal Univ, Dept Phys, Key Lab Optoelect Mat & Device, Shanghai 200234, Peoples R China
Wang, Xi'an
Tang, Yanxue
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Shanghai Normal Univ, Dept Phys, Key Lab Optoelect Mat & Device, Shanghai 200234, Peoples R ChinaShanghai Normal Univ, Dept Phys, Key Lab Optoelect Mat & Device, Shanghai 200234, Peoples R China
Tang, Yanxue
Luo, Haosu
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Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Devices, Shanghai 201800, Peoples R ChinaShanghai Normal Univ, Dept Phys, Key Lab Optoelect Mat & Device, Shanghai 200234, Peoples R China
Luo, Haosu
Liang, Zhu
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Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Devices, Shanghai 201800, Peoples R ChinaShanghai Normal Univ, Dept Phys, Key Lab Optoelect Mat & Device, Shanghai 200234, Peoples R China