New quaternary Ge3S6Ag1-xSnx ( 0 . 0 ≤ x ≤ 1 ) chalcogenide glasses for optical devices

The physical characteristics of quaternary ternary glass, which is based on sulfur and contains copper, are the main topic of the investigation. Ge3S6Ag1-xSnx chalcogenide glasses were fabricated using the conventional meltquench method. With an increase in concentration of Sn, it was observed that the glass's density (rho) decreased but the molar volume (Vm) increased. Transmittance and reflection measurements of the films were made over a range of 0.30-2.5 mu m. The estimated envelopes (upper (RM) and lower (Rm)) of the reflection spectrum might be used to determine the complex index of refraction (real (n) and imagery (k)) and the film thickness (t). There was a matching decrease in the index of refraction (n) and an increase in the optical gap (Eg) for increasing concentrations of tin. Further information on results pertaining to refraction loss, plasma frequency, and electronic polarizability was also supplied by the study. The effects of varying concentrations of tin on the film's nonlinear index of refraction (n2), 3ed order susceptibility (chi(3)), and nonlinear absorption coefficient (chi a) were investigated further. In Ge3S6Ag1-xSnx system, the values of n2, third-order susceptibility chi(3), and nonlinear absorption coefficient chi a decrease with the addition of tin, which replaces Ag atoms with higher density and atomic radius. Finally, the films analyzed in our work exhibit interesting properties for application in various optical devices.