Sol-gel prepared ZnO: UV irradiation effect on structure and surface properties

被引：0

作者：

Sukhov, Ivan, V ^{[1
]}

Filippov, Ivan A. ^{[1
]}

Pronin, Igor A. ^{[1
]}

Sysoev, Victor V. ^{[2
]}

Kondratev, Valeriy M. ^{[3
,4
]}

Komolov, Alexei S. ^{[5
]}

Lazneva, Eleonora F. ^{[5
]}

Karmanov, Andrey A. ^{[1
]}

Yakushova, Nadezhda D. ^{[1
]}

Moshnikov, Vyacheslav A. ^{[6
]}

Korotcenkov, Ghenadii ^{[7
]}

机构：

[1] Penza State Univ, Dept Nano & Microelect, Penza 440026, Russia

[2] Yuri Gagarin State Tech Univ Saratov, Dept Phys, Saratov 410054, Russia

[3] Moscow Inst Phys & Technol, Dolgoprudnyi 141701, Moscow Region, Russia

[4] Alferov Univ, St Petersburg 194021, Russia

[5] St Petersburg State Univ, St Petersburg 199034, Russia

[6] St Petersburg Electrotech Univ LETI, St Petersburg 197022, Russia

[7] Moldova State Univ, Dept Phys & Engn, Kishinev 2009, Moldova

来源：

MENDELEEV COMMUNICATIONS | 2024年 / 34卷 / 05期

基金：

俄罗斯科学基金会;

关键词：

sol-gel technology; epidermal electronics; zinc oxide; UV irradiation effect; XPS;

D O I：

10.1016/j.mencom.2024.09.006

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The effect of UV irradiation on sol-gel prepared ZnO films subjected to mild thermal annealing was investigated, with special attention to their structural and surface properties. Sol-gel processes, including a high-temperature annealing stage, have been adapted to the requirements of flexible electronics for in situ synthesis of semiconductor ZnO films on polymer substrates at lower temperatures due to UV irradiation. Application of UV radiation with emission peaks at 185 and 254 nm to films annealed at 180 degrees C made it possible to obtain ZnO films with Zn/O ratios of ca. 1, which cannot be achieved by heat treatment alone.

引用

页码：643 / 646

页数：4

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