Enhancing interfacial heat conduction in diamond-reinforced copper composites with boron carbide interlayers for thermal management

In this work, we have synthesized a copper/boron carbide/diamond composite structure via magnetron sputtering. Surface roughness of the diamond layers was characterized using atomic force microscopy (AFM), and interfacial thermal conductance (ITC) between copper and diamond was experimentally measured by the Time-domain Thmoreflectance (TDTR) technique. Molecular dynamics (MD) simulations were conducted to investigate the influence of the <010> crystal plane thickness of boron carbide and interface roughness on the ITC. The results indicate a significant increase in ITC with the incorporation of a <010>-oriented boron carbide interlayer. The ITC initially rose and then fell as the boron carbide layer thickness increased, reaching a maximum of 286.52 MW m(-2) K-1 for a three-layer (approximately 2 nm) interlayer, which is 14.1 times higher than that of the unmodified interface. Additionally, by creating a three-dimensional sinusoidal rough interface, we observed that increasing interface roughness can further enhance heat transfer efficiency up to a certain threshold, beyond which a saturation in phonon heat conduction is anticipated. The simulation outcomes are in good agreement with the experimental data, confirming the reliability of our findings.