Stochastic Aware Modeling of Voltage Controlled Magnetic Anisotropy MRAM

被引：0

作者：

Wang, Bowen ^{[1
,2
]}

Garcia-Redondo, Fernando ^{[1
]}

Bardon, Marie Garcia ^{[1
]}

Oh, Hyungrock ^{[1
]}

Gupta, Mohit ^{[3
]}

Kim, Woojin ^{[1
]}

Favaro, Diego ^{[1
]}

Chen, Yukai ^{[1
]}

Dehaene, Wim ^{[1
,2
]}

机构：

[1] IMEC, B-3001 Leuven, Belgium

[2] Katholieke Univ Leuven, Dept Elect Engn, MICAS Grp, B-3001 Leuven, Belgium

[3] Axelera AI, B-3000 Leuven, Belgium

来源：

IEEE TRANSACTIONS ON NANOTECHNOLOGY | 2024年 / 23卷

关键词：

VCMA; MRAM; Verilog-A; compact model; stochasticity; probabilistic-switching; SPINTRONICS; MEMORY;

D O I：

10.1109/TNANO.2024.3361718

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a physics-based compact model for Voltage-Controlled Magnetic Anisotropy (VCMA) MRAM, calibrated against fabricated devices. Our model addresses inherent stochasticity, offering a robust tool for the design and simulation of VCMA MRAM peripheral circuits. Achieving a tenfold increase in simulation speed compared to existing stochastic Landau-Lifshitz-Gilbert-Slonczewski (sLLGS) based models (10x to 100x), and overcoming accuracy problems related to VCMA macro-spin sLLGS simulations, our approach enables efficient exploration of MRAM based circuits. The model efficiency and accuracy are demonstrated through a practical use case.

引用

页码：144 / 150

页数：7

共 50 条

[1] Recent Progress in the Voltage-Controlled Magnetic Anisotropy Effect and the Challenges Faced in Developing Voltage-Torque MRAM
Nozaki, Takayuki
Yamamoto, Tatsuya
Miwa, Shinji
Tsujikawa, Masahito
Shirai, Masafumi
Yuasa, Shinji
Suzuki, Yoshishige
MICROMACHINES, 2019, 10 (05)
[2] Electric-field-controlled MRAM using voltage control of magnetic anisotropy: Progress, scaling, and challenges
Khalili, P.
Wang, K. L.
2015 IEEE MAGNETICS CONFERENCE (INTERMAG), 2015,
[3] High Performance MRAM with Spin-Transfer-Torque and Voltage-Controlled Magnetic Anisotropy Effects
Cai, Hao
Kang, Wang
Wang, You
Naviner, Lirida Alves De Barros
Yang, Jun
Zhao, Weisheng
APPLIED SCIENCES-BASEL, 2017, 7 (09):
[4] Performance Analysis of Voltage-Controlled Magnetic Anisotropy MRAM-Based Logic Gates and Full Adder
Jangra, Payal
Duhan, Manoj
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2023, 12 (05)
[5] Modeling and Exploration of the Voltage-Controlled Magnetic Anisotropy Effect for the Next-Generation Low-Power and High-Speed MRAM Applications
Kang, Wang
Ran, Yi
Zhang, Youguang
Lv, Weifeng
Zhao, Weisheng
IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2017, 16 (03) : 387 - 395
[6] Analysis and Compact Modeling of Magnetic Tunnel Junctions Utilizing Voltage-Controlled Magnetic Anisotropy
Lee, Hochul
Lee, Albert
Wang, Shaodi
Ebrahimi, Farbod
Gupta, Puneet
Amiri, Pedram Khalili
Wang, Kang L.
IEEE TRANSACTIONS ON MAGNETICS, 2018, 54 (04)
[7] Review of voltage-controlled magnetic anisotropy and magnetic insulator
Dai, Bingqian
Jackson, Malcolm
Cheng, Yang
He, Haoran
Shu, Qingyuan
Huang, Hanshen
Tai, Lixuan
Wang, Kang
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2022, 563
[8] Magnetic Skyrmion Transistor Gated with Voltage-Controlled Magnetic Anisotropy
Yang, Seungmo
Son, Jong Wan
Ju, Tae-Seong
Tran, Duc Minh
Han, Hee-Sung
Park, Sungkyun
Park, Bae Ho
Moon, Kyoung-Woong
Hwang, Chanyong
ADVANCED MATERIALS, 2023, 35 (09)
[9] Switching of a magnetic tunnel junction by voltage-controlled magnetic anisotropy
Favaro, D.
Kim, W.
Ranjbar, S.
Monteiro, M. Gama
Carpenter, R.
Rao, S.
Van Beek, S.
Labbate, L.
Van Houdt, J.
Temst, K.
Couet, S.
PHYSICAL REVIEW APPLIED, 2025, 23 (01):
[10] LARGE PERPENDICULAR MAGNETIC ANISOTROPY AND VOLTAGE CONTROLLED MAGNETIC ANISOTROPY EFFECTS AT CoFe/MgO INTERFACE
Prasad, Bhagwati
Smith, Neil
Wan, Lei
Kalitsov, Alan
Carey, Matt
Katine, Jordan
Santos, Tiffany
32ND MAGNETIC RECORDING CONFERENCE (TMRC 2021), 2021,

← 1 2 3 4 5 →