Tunnel hole injection in a unipolar HgCdTe-based laser diode

被引：0
|
作者：
Zholudev, M. S. [1 ,2 ]
Litovchenko, O. M. [1 ,2 ]
Morozov, S., V [1 ,2 ]
机构：
[1] RAS, Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia
[2] Lobachevsky State Univ Nizhny Novgorod, Nizhnii Novgorod 603950, Russia
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2025年 / 40卷 / 03期
基金：
俄罗斯科学基金会;
关键词：
semiconductor laser; mercury-cadmium-telluride; tunnel effect; resonant tunneling; TOPOLOGICAL PHASE-TRANSITION; MOLECULAR-BEAM EPITAXY; QUANTUM-WELLS; WAVELENGTH; EMISSION; RECOMBINATION; FERMIONS;
D O I：
10.1088/1361-6641/ada9cc
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Construction of a p-doping free HgCdTe-based laser diode is proposed. Hole injection in the active region is done by carrier tunneling from the valence band to the conduction band through the resonance state formed in a series of quantum wells in an external electric field. The charge carriers are localized in the active region by barrier layers with selective resonant tunneling: for holes on one side and for electrons on the other. Calculations of the resonance state providing interband tunneling are carried out.
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页数：7
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