Ti3C2Tx MXene-based (Cobalt-Vanadium) bimetallic sulfides 0D@2D heterostructure composite for asymmetric supercapacitor application

被引:1
|
作者
Dardeer, Mahmoud [1 ]
Chhetri, Kisan [2 ]
Shrestha, Devendra [1 ]
Kandel, Rupesh [1 ]
Park, Chan Hee [1 ,3 ,4 ,5 ]
机构
[1] Jeonbuk Natl Univ, Grad Sch, Dept Bionanotechnol & Bioconvergence Engn, Jeonju 54896, South Korea
[2] Jeonbuk Natl Univ, Dept Nano Convergence Engn, Jeonju 54896, South Korea
[3] Jeonbuk Natl Univ, Adv Mech Components Design & Res Ctr, Jeonju 54896, South Korea
[4] Jeonbuk Natl Univ, Grad Sch, Dept Bionanosyst Engn, Jeonju 54896, South Korea
[5] Jeonbuk Natl Univ, Div Mech Design Engn, Jeonju 54896, South Korea
关键词
MXene; Metal-Sulfides; Nanocomposite; Asymmetric supercapacitors (ASCs); Energy density; VS2; NANOSHEETS; PERFORMANCE; ANODE; NANOPARTICLES;
D O I
10.1016/j.jelechem.2025.119002
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
2D MXenes are receiving a significant attention in the energy-storage sector, owing to their high surface redox reactivity, hydrophilicity, multi-layered sheet structure, and high conductivity. However, MXenes are subjected to sheets restacking which decrease the number of surface-active sites, and thus limits their capacity value. In this work, CoVS2 NPs are in-situ grown over the Ti3C2Tx nanosheets using a facile hydrothermal technique. The insertion of the nanoparticles can reduce the restacking of the sheets and creating abundant active sites. As a cathode material for the (ASCs) application, the CoVS2@MXene hybrid electrode achieves a high specific capacity value of 423 mAh g(-1) at 1 A g(-1), with an outstanding cycling stability of more than 93 % capacity retention after 5000 working cycles. Moreover, the obtained CoVS2@MXene//VS2@MXene ASC device provides a significant energy density of similar to 57.78 W h kg(-1) at 832 W kg(-1) power density, and 90.3 % capacity retention. Such results indicate that the CoVS2@MXene hybrid material offers excellent potential for future development of a new MXene-based supercapacitor devices.
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页数:9
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