Investigation of temporal characteristics of photosensitive heterostructures based on gallium arsenide and silicon

被引：0
|
作者：
Giyasova, F. A. [1 ]
Yuldoshev, M. A. [2 ,3 ]
机构：
[1] Kimyo Int Univ Tashkent, Tashkent, Uzbekistan
[2] Univ Business & Sci, Namangan, Uzbekistan
[3] Alfraganus Univ, Tashkent, Uzbekistan
来源：
CHALCOGENIDE LETTERS | 2025年 / 22卷 / 02期
关键词：
Rise time; Fall time; Reverse current; Response speed; Photodiode; Structure; Photocurrent; Light pulse;
D O I：
10.15251/CL.2025.222.123
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The paper briefly describes the methodology for studying the temporal characteristics of near-IR photodiode structures under the influence of pulsed radiation from a semiconductor laser with a wavelength of 1100 and 1320 nm. The results of studying the response time of multilayer photosensitive Au-nCdS-nSi-pCdTe-Au and Au-nInP-nCdS-nu GaAs:O-Au structures with potential barriers are presented. It has been experimentally shown that the structures under study are not inferior in response time to known analogs based on gallium arsenide and silicon heterostructures, and can also be used in a wide optical range.
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页码：123 / 129
页数：7
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