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Simultaneous Improvement and Tailoring Upconversion and Downshift Luminescence of Cs2NaErCl6 via Yb3+ Alloying for Versatile Photoelectric Applications
被引:0
|作者:
Liu, Bo
[1
]
Li, You
[1
]
Xu, Sai
[1
]
Chang, Jianglong
[1
]
Gao, Yuefeng
[2
]
Yu, Hongquan
[1
]
Wang, Yichao
[1
]
Chen, Baojiu
[1
]
机构:
[1] Dalian Maritime Univ, Sch Sci, Dalian 116026, Peoples R China
[2] Dalian Maritime Univ, Marine Engn Coll, Dalian 116026, Peoples R China
基金:
中国国家自然科学基金;
关键词:
rare-earth-based double perovskite;
energy transfer;
cross-relaxation;
anticounterfeiting;
photoelectricdetection;
LANTHANIDE-DOPED NANOCRYSTALS;
ENERGY;
CHEMISTRY;
PHOSPHORS;
D O I:
10.1021/acsami.5c01548
中图分类号:
TB3 [工程材料学];
学科分类号:
0805 ;
080502 ;
摘要:
Lead-free double perovskite (DP) materials have garnered growing interest because of their outstanding optoelectronic attributes. Nevertheless, realizing efficient, multimodal photoluminescence (PL) with adjustable emission spectra within single-host DP materials still poses a formidable hurdle. Herein, Er-based lead-free DPs (Cs2NaErCl6) were developed, which achieves downshift (DS) emissions from visible to near-infrared (NIR) and multicolor upconversion (UC) emissions, resulting from the abundant energy levels of Er3+ ions. Alloying with Yb3+ introduces new Yb3+-Er3+ cross-relaxation (CR) pathways, leading to a 308.5-fold increase in DS red emission and achieving a maximum color purity of 98.63%. Additionally, Yb3+ alloying enhances UC luminescence by 10.8-fold due to its strong absorption cross section around 980 nm. The colors of the UC emission can be adjusted by altering the doping concentration of Yb3+ and laser power density. Spectral analysis and theoretical calculations reveal the high compatibility of Yb3+ ions with Cs2NaErCl6, and the critical role of CR and energy-transfer processes in achieving efficient, tunable, and multimodal PL. Furthermore, the developed DP materials have been utilized in anticounterfeiting, information encoding, and narrow-band NIR photodetectors, expanding the versatile uses of rare-earth (RE)-based DP materials in the optoelectronics field.
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页码:18688 / 18700
页数:13
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