TCAD Simulation Study of Cylindrical Vertical Double-Surrounding-Gate a-InGaZnO FETs and Geometric Parameter Optimization

被引：0

作者：

Zhao, Yue ^{[1
,2
]}

Xu, Lihua ^{[1
]}

Chen, Chuanke ^{[1
,2
]}

Li, Xufan ^{[1
,2
]}

Shang, Kexin ^{[1
,2
]}

Geng, Di ^{[1
,2
]}

Wang, Lingfei ^{[1
,2
]}

Li, Ling ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Inst Microelect, State Key Lab Fabricat Technol Integrated Circuits, Beijing 100029, Peoples R China

[2] Univ Chinese Acad Sci, Sch Integrated Circuits, Beijing 100049, Peoples R China

来源：

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | 2025年 / 13卷

基金：

中国国家自然科学基金;

关键词：

Field effect transistors; Logic gates; Electrodes; Threshold voltage; Fabrication; Optimization; Three-dimensional displays; Modulation; Insulators; Hafnium oxide; Vertical transistor; double-surrounding-gate; TCAD; a-IGZO; gate length; gate position; scaling behavior; THIN-FILM TRANSISTORS; THRESHOLD VOLTAGE; TEMPERATURE; MODEL; PERFORMANCE; MOSFET;

D O I：

10.1109/JEDS.2025.3528073

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Threshold control of amorphous In-Ga-Zn-O field-effect transistor (a-IGZO FET) is generally a critical issue through material composition adjustment. Instead, this work reports a cylindrical vertical double-surrounding-gate (DSG) a-IGZO FET, featuring flexibility of threshold modulation, by the 3-D technology computer-aided design (TCAD) simulation. Firstly, physics-based parameters are calibrated to single-gated vertical transistor experiments. Thereafter, the performance is simulated by sweeping inner gate (G(1)) bias voltages under the various outer gate (G(2)) voltages, indicating the ability of threshold modulation. Length-scaling and position-variation of G(2) significantly impact the transistor performance metrics. For in-depth understanding of dimensional dependence, the surface potential of the channel and the electric field distribution near electrode are systematically investigated for an ultra-thin outer gate electrode, via considering spatial and geometric effects. These results will boost a design technology co-optimization flow of the future DSG-a-IGZO-FET-based extremely large-scale and high-density M3D memory.

引用

页码：66 / 72

页数：7