Modulation of magnetic and dielectric properties of La-substituted barium ferrite based on BBSZ for microwave device applications.

被引:0
|
作者
Lei, Yida [1 ]
Li, Jie [1 ]
Zhang, Huaiwu [1 ]
机构
[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Film & Integrated Device, Chengdu, Peoples R China
基金
中国国家自然科学基金;
关键词
Barium ferrite; LTCF; microwave devices; permeability; dielectric constant; HEXAFERRITES;
D O I
10.1109/ICEPT63120.2024.10668719
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The low temperature co-fired ferrite (LTCF) technology is critical for improving microwave device performance and enabling miniaturization and integration of electronic systems. In present work, La-doped Ba1.5Sr1.5Co2-xLaxFe23O41 (x = 0.00 to 0.75 with a step of 0.15) ferrite was prepared by a solid-phase reaction method at low temperatures with the addition of 1.5%wt BBSZ (H3BO3-Bi2O3-SiO2-ZnO) as flux. The XRD results show that the second phase, W-type phase, is always present in the samples and becomes more pronounced in the samples as the amount of La doping increases. The relative densities of all samples are above 92%, and SEM reveals that the samples have a well-densified structure. Particularly, at x = 0.3, the saturation magnetization increases from 56.15 emu/g to 58.78 emu/g, and the permeability t' of the sample shows a 38% increase at 200MHz. For dielectric properties, the dielectric constant epsilon' of the samples remains stable within the frequency range of 10 to 500 MHz, with a maximum value of 21.18, and the dielectric loss maintains a low value. Consequently, these La-doped barium ferrites demonstrate considerable promise for extensive use across electronic devices.
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页数:4
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