Silicon-based gallium oxide optical waveguide fabricated by MOCVD

In this paper, the Ga2O3 films were grown on Si/SiO2 template by MOCVD and the effects of the growth temperature on the film's properties were investigated. The films transitioned from an amorphous phase to a polycrystalline (3-Ga2O3 phase as the growth temperature increased. The bonding state of oxygen in the films was investigated. Based on the measured optical parameters of amorphous Ga2O3 films and optical simulation calculation, optical waveguide structures were designed and fabricated. The characteristics of the waveguide were consistent with the design. The 2.5-mu m-wide, 310-nm-high Ga2O3 waveguide achieved an optical loss of 12.4 dB/cm at 1550 nm using the truncation method. This study demonstrated that amorphous Ga2O3 films grown by the MOCVD have great potential for waveguide fabrication.