Novel Low Thermal Budget Bonding Using Single Wafer Thermal Processing System, Resulting in Excellent Wafer-to-Wafer Hybrid Bonding at sub-0.5um Pitch

被引：0

作者：

Gorchichko, Mariia ^{[1
]}

Sharma, Shashank ^{[1
]}

Ng, Ben ^{[1
]}

Sherwood, Tyler ^{[2
]}

Jeon, Yoocharn ^{[1
]}

Mcintyre, Dylan ^{[2
]}

Li, Kun ^{[2
]}

Singh, Sarabjot ^{[2
]}

Iler, Evan ^{[1
]}

Knapp, David ^{[1
]}

Prakash, Amit ^{[1
]}

Viet Nguen ^{[2
]}

Sreenivasan, Raghav ^{[1
]}

Krishnan, Siddarth ^{[1
]}

Chudzik, Michael ^{[1
]}

机构：

[1] Appl Mat Inc, Santa Clara, CA 95054 USA

[2] Appl Mat Inc, Albany, NY USA

来源：

PROCEEDINGS OF THE IEEE 74TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE, ECTC 2024 | 2024年

关键词：

DRAM; HBM; W2W; thermal annealing; hybrid bonding; heterogeneous integration; advanced packaging; recess control;

D O I：

10.1109/ECTC51529.2024.00395

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on a reduced thermal budget for hybrid bonding anneal using a single wafer thermal processing system (TPS). Robust bonding with excellent Cu gap closure and grain growth across the interface was achieved using a single step 300 degrees C 5min TPS anneal, thereby reducing anneal duration by two orders of magnitude compared to the industry standard furnace anneal. The Cu gap closure efficacy with 350 degrees C 5min TPS anneal was further verified electrically through functional 2Mb viachains @ 0.5um pitch with a Rs/link <5 Ohm.

引用

页码：404 / 407

页数：4

共 15 条

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