Recent developments in polymer semiconductors with excellent electron transport performances

被引:0
|
作者
Zhang, Yunchao [1 ,2 ]
Zhang, Weifeng [1 ,3 ]
Chen, Zhihui [1 ]
Wang, Liping [2 ]
Yu, Gui [1 ,3 ]
机构
[1] Chinese Acad Sci, CAS Res Educ Ctr Excellence Mol Sci, Inst Chem, Beijing Natl Lab Mol Sci, Beijing 100190, Peoples R China
[2] Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing 100083, Peoples R China
[3] Univ Chinese Acad Sci, Sch Chem Sci, Beijing 100049, Peoples R China
基金
中国国家自然科学基金;
关键词
FIELD-EFFECT TRANSISTOR; DEFICIENT BUILDING-BLOCK; DIRECT ARYLATION POLYCONDENSATION; N-TYPE; CONJUGATED POLYMERS; CHARGE-TRANSPORT; SIDE-CHAINS; ACCEPTOR; DONOR; MOBILITY;
D O I
10.1039/d4cs00504j
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Benefiting from molecular design and device innovation, electronic devices based on polymer semiconductors have achieved significant developments and gradual commercialization over the past few decades. Most of high-performance polymer semiconductors that have been prepared exhibit p-type performances, and records of their carrier mobilities are constantly being broken through. Although ambipolar and n-type polymers are necessary for constructing p-n heterojunctions and logic circuits, only a few materials show outstanding device performances, which leads to their developments lagging far behind that of p-type analogues. As a consequence, it is extremely significant to summarize polymer semiconductors with excellent electron transport performances. This review focuses on the design considerations and bonding modes between monomers of polymer semiconductors with high electron mobilities. To enhance electron transport performances of polymer semiconductors, the structural modification strategies are described in detail. Subsequently, the electron transport, thermoelectric, mixed ionic-electronic conduction, intrinsically stretchable, photodetection, and spin transport performances of high-electron mobility polymers are discussed from the perspective of molecular engineering. In the end, the challenges and prospects in this research field are presented, which provide valuable guidance for the design of polymer semiconductors with excellent electron transport performances and the exploration of more advanced applications in the future.
引用
收藏
页码:2483 / 2519
页数:37
相关论文
共 50 条
  • [1] RECENT DEVELOPMENTS IN THE CHARACTERIZATION OF SEMICONDUCTORS BY TRANSPORT MEASUREMENTS
    BLOOD, P
    ORTON, JW
    ACTA ELECTRONICA, 1983, 25 (02): : 103 - 121
  • [2] Preface to recent developments in the electron microscopy of semiconductors
    Takeda, S
    Cherns, D
    JOURNAL OF ELECTRON MICROSCOPY, 2000, 49 (02): : 209 - 209
  • [3] Recent developments in the application of electron accelerators for polymer processing
    Chmielewski, A. G.
    Al-Sheikhly, M.
    Berejka, A. J.
    Cleland, M. R.
    Antoniak, M.
    RADIATION PHYSICS AND CHEMISTRY, 2014, 94 : 147 - 150
  • [4] MUONIUM IN SEMICONDUCTORS - RECENT EXPERIMENTAL DEVELOPMENTS
    SCHNEIDER, JW
    HYPERFINE INTERACTIONS, 1994, 86 (1-4): : 653 - 665
  • [5] Recent developments in hydrodynamical modeling of semiconductors
    Anile, AM
    Mascali, G
    Romano, V
    MATHEMATICAL PROBLEMS IN SEMINCONDUCTOR PHYSICS, 2003, 1823 : 1 - 56
  • [6] Useful effects of space charge and dipole polarization: Recent developments in polymer electrets and organic semiconductors
    Gerhard-Multhaupt, Reimund
    Faria, Roberto M.
    Oliveira, Osvaldo N., Jr.
    Giacometti, Jose A.
    IEEE TRANSACTIONS ON DIELECTRICS AND ELECTRICAL INSULATION, 2006, 13 (05) : 939 - 941
  • [7] Recent developments in polymer MEMS
    Liu, Chang
    ADVANCED MATERIALS, 2007, 19 (22) : 3783 - 3790
  • [8] RECENT DEVELOPMENTS IN POLYMER CATALYSIS
    BRENNER, W
    TRANSACTIONS OF THE NEW YORK ACADEMY OF SCIENCES, 1971, 33 (07): : 710 - &
  • [9] Recent developments in polymer design
    Yeates, SG
    Richards, SN
    SURFACE COATINGS INTERNATIONAL, 1996, 79 (10): : 437 - +
  • [10] Polymer Networks: Recent Developments
    Patrickios, Costas S.
    POLYMER NETWORKS: SYNTHESIS, PROPERTIES, THEORY AND APPLICATIONS, 2010, 291-292 : 1 - 11