MoSe2/P3HT Hybrid Heterostructure Field-Effect-Transistor for Photodetection

In recent years, there has been a surge of interest in organic-inorganic hybrid heterostructures for optoelectronic devices due to their unparalleled advantages over all organic or all inorganic heterostructures. Despite substantial research, the potential of such hybrid heterostructures in phototransistor configuration has not been fully explored. Here, a hybrid phototransistor based on molybdenum diselenide (MoSe2) and poly(3-hexylthiophene-2,5-diyl) (P3HT) heterojunction are reported with high n-channel field-effect mobility of 5.6 cm(2) V-1 s(-1) and excellent photodetector performance. The passivation of MoSe2 by the P3HT layer helps in notable reduction in the hysteresis loop, which otherwise can cause operational instabilities and measurement uncertainties. The hybrid phototransistor exhibits a large photoresponsivity of 40.4 AW(-1) and a high detectivity of 2.03 x 10(10) Jones at 660 nm wavelength irradiation. More importantly, the device features a fast photoresponse speed with rise/fall time of 363/370 mu s, which is superior to other hybrid phototransistors based on transition metal dichalcogenides (TMD)-organic heterostructures. These results highlight the potential of organic-inorganic systems as a possible avenue for developing next-generation hybrid phototransistors.