20W and 20% PAE 2-10 GHz High-Power Amplifier for Multifunction RF Systems Manufactured in Leonardo's GaN pHEMT 0.25um Technology

被引：0

作者：

Prieto, Alvaro ^{[1
]}

Ferreras, Alfonso ^{[1
]}

Luis Jimenez-Martin, Jose ^{[2
]}

Montero-de-Paz, Javier ^{[1
]}

Oreja-Gigorro, Eduardo ^{[1
]}

Gonzalez-Posadas, Vicente ^{[2
]}

Jose Sanchez-Martinez, Juan ^{[1
]}

机构：

[1] Indra Sistemas SA, Madrid, Spain

[2] Univ Politecn Madrid, Madrid, Spain

来源：

2024 19TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE, EUMIC 2024 | 2024年

关键词：

AESA; GaN; Power Amplifiers; MMIC; Multifunction; Wideband;

D O I：

10.23919/EuMIC61603.2024.10732199

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the design and measurement of a High Power Amplifier (HPA) for Multifunction RF (MFRF) systems. The amplifier have been designed employing Leonardo's pHEMT GaN process with 250 nm of gate length (LDO_GN25). The amplifier achieves a mean value of 43 dBm of output power with a mean value of power added efficiency of 20 % in the 2-10 GHz frequency band. This HPA is a suitable amplifier to be integrated in the future Transmit and Receive Modules (TRMs) for Active Electronically Scanned Array (AESA) systems that include Radar, Electronic Warfare (EW) and Communications (COMMs) capabilities in the same system.

引用

页码：283 / 286

页数：4