Plasma Dielectric Etching with C4H2F6 Isomers of Low Global-Warming Potential

被引：0
|
作者：
Choi, Minsu [1 ]
Lee, Youngseok [2 ]
Cho, Chulhee [1 ]
Jeong, Wonnyoung [1 ]
Seong, Inho [1 ]
Haque, Jami Md Ehsanul [1 ]
Choi, Byeongyeop [1 ]
Seo, Seonghyun [1 ]
Kim, Sijun [2 ]
You, Shinjae [1 ,2 ]
Yeom, Geun Young [3 ,4 ]
机构：
[1] Chungnam Natl Univ, Dept Phys, Daejeon 34134, South Korea
[2] Chungnam Natl Univ, Inst Quantum Syst IQS, Daejeon 34134, South Korea
[3] Sungkyunkwan Univ, Dept Adv Mat Sci & Engn, Suwon 16419, South Korea
[4] Sungkyunkwan Univ, SKKU Adv Inst Nano Technol SAINT, Suwon 16419, South Korea
来源：
JOURNAL OF MANUFACTURING AND MATERIALS PROCESSING | 2025年 / 9卷 / 02期
基金：
新加坡国家研究基金会;
关键词：
plasma etching; global-warming potential; alternative precursors; plasma diagnostics; surface chemistry analysis; QUADRUPOLE MASS-SPECTROMETER; COUPLED FLUOROCARBON PLASMAS; SILICON DIOXIDE; SIO2;
D O I：
10.3390/jmmp9020042
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
This paper presents the observed changes when replacing the widely used CHF3 gas in semiconductor processing with two isomeric gases, C4H2F6-iso and C4H2F6-Z. This study investigates the etching process results of SiO2 and Si3N4 by varying the ratios of CHF3, C4H2F6 gases. The process outcomes were analyzed using ellipsometer and X-ray photoelectron spectroscopy, while plasma radical densities were examined through quadrupole mass spectrometry. The results are compared across five conditions, with substitution gas ratios ranging from 0% to 100%. The process results indicated that the selectivity increased at certain gas ratios. The diagnostic results provided the ratios of various etchants within the plasma. This research advances the development of alternative precursors designed to mitigate the effects of global warming.
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页数：12
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