Effect of Precipitates on Dislocation Loops in Vanadium Alloy After Irradiation with 60 keV Deuterium Ions at Room Temperature

被引:0
|
作者
Wang, Jing [1 ,2 ]
Chen, Mingxin [1 ]
Zhang, Yifan [1 ,2 ]
Ma, Bing [1 ,2 ]
Jiang, Haiyan [1 ,3 ]
Chen, Chang [2 ]
机构
[1] Hefei Univ Technol, Sch Mat Sci & Engn, Hefei 230009, Peoples R China
[2] Minist Educ, Engn Res Ctr High Performance Copper Alloy Mat & P, Hefei 230009, Peoples R China
[3] Hefei Univ Technol, Sch Phys, Hefei 230601, Peoples R China
基金
中国国家自然科学基金;
关键词
vanadium alloy; irradiation; precipitate; dislocation loop; TEM; NEUTRON; TI; V-4CR-4TI; CR; MICROSTRUCTURE; EVOLUTION;
D O I
10.3390/met14121435
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The effect of different precipitates and nanoparticles on the distribution of radiation-induced dislocation loops in V-4Cr-4Ti alloy and V-4Cr-4Ti-1.8Y-0.4Ti3SiC2 alloy were studied. Both alloys were irradiated with 60 keV deuterium, and the distribution of the dislocation loops was statistically analyzed using the transmission electron microscope (TEM) technique. The results indicated that platelet-like Ti(CNO) precipitates affect the dislocation distribution, in which a significantly reduced dislocation number density in the area within 20 nm of the interface was observed. This phenomenon is attributed to the strong compressive strain in the vertical interface direction at the precipitates/matrix interface. No significant effect on loop distribution was observed in the coherent TiC/matrix interface, which may result from the almost no strain interface. In addition, the uniform distribution of radiation-induced dislocation loops in equivalent crystal orientation was confirmed via the TEM images with multiple g vectors.
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页数:14
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