Synthesis of CdO nanoparticles using facile solid-state reaction and systematic study on their physical properties

被引:0
|
作者
Jaswanth, Arcot [1 ]
Kaleemulla, Shaik [2 ]
机构
[1] Vellore Inst Technol, Sch Adv Sci, Thin Films Lab, Vellore 632014, Tamil Nadu, India
[2] Vellore Inst Technol, Ctr Funct Mat, Thin Films Lab, Vellore 632014, Tamil Nadu, India
关键词
Cadmium oxide; Nanoparticles; Solid-state reaction; Semiconductor; Photoluminescence; OPTICAL-PROPERTIES; CADMIUM-OXIDE; NANOSTRUCTURES; FILMS;
D O I
10.1007/s11696-025-03904-0
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Indium doped cadmium oxide nanoparticles Cd1-xInxO at x = 0, 0.03, 0.05 and 0.07 were prepared using facile solid-state reaction and studied the role of indium (In) on physical properties of the Cd1-xInxO nanoparticles. The synthesized nanoparticles were subjected to different characterization techniques such as XRD, FESEM, EDAX, FT-IR, UV-Vis-NIR, Raman, PL, and I-V characteristics. The XRD results confirmed that the Cd1-xInxO nanoparticles were in cubic bixbyite structure with crystallite size in the range of 28 nm to 38 nm. Using the optical absorbance and reflectance spectra, the optical band gap of the Cd1-xInxO nanoparticles was calculated, and it decreased from 1.81 to 1.76 eV with an increase in indium concentration. Clear peaks at 480 cm-1 confirmed the metal-oxygen (Cd-O) bonding. The strong Raman modes are observed at 249.94 cm-1, 261.92 cm-1, 260.81 cm-1, 260.53 cm-1 in Raman spectra. The nanoparticle size was further confirmed by FE-SEM micrographs and histogram plots. In the PL spectra, emission peaks were observed at 423 nm, 485 nm, 532 nm, and 606 nm. The electrical properties were studied using two probe methods and the electrical resistance decreased with an increase in indium concentration.
引用
收藏
页码:2053 / 2063
页数:11
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