Signature of pressure-induced topological phase transition in ZrTe5

被引:0
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作者
Zoltán Kovács-Krausz [1 ]
Dániel Nagy [2 ]
Albin Márffy [3 ]
Bogdan Karpiak [1 ]
Zoltán Tajkov [2 ]
László Oroszlány [4 ]
János Koltai [5 ]
Péter Nemes-Incze [6 ]
Saroj P. Dash [3 ]
Péter Makk [7 ]
Szabolcs Csonka [8 ]
Endre Tóvári [5 ]
机构
[1] Budapest University of Technology and Economics,Department of Physics, Institute of Physics
[2] MTA-BME Superconducting Nanoelectronics Momentum Research Group,Department of Physics of Complex Systems
[3] ELTE Eötvös Loránd University,Department of Microtechnology and Nanoscience
[4] Chalmers University of Technology,Hungarian Research Network, Centre for Energy Research
[5] Institute of Technical Physics and Materials Science,Centre of Low Temperature Physics, Institute of Experimental Physics
[6] Slovak Academy of Sciences,MTA
[7] Budapest University of Technology and Economics,BME Lendület Topology and Correlation Research Group
[8] ELTE Eötvös Loránd University,Department of Biological Physics
[9] MTA-BME Correlated van der Waals Structures Momentum Research Group,undefined
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D O I
10.1038/s41535-024-00679-7
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摘要
The layered van der Waals material ZrTe5 is known as a candidate topological insulator (TI), however its topological phase and the relation with other properties such as an apparent Dirac semimetallic state is still a subject of debate. We employ a semiclassical multicarrier transport (MCT) model to analyze the magnetotransport of ZrTe5 nanodevices at hydrostatic pressures up to 2 GPa. The temperature dependence of the MCT results between 10 and 300 K is assessed in the context of thermal activation, and we obtain the positions of conduction and valence band edges in the vicinity of the chemical potential. We find evidence of the closing and re-opening of the band gap with increasing pressure, which is consistent with a phase transition from weak to strong TI. This matches expectations from ab initio band structure calculations, as well as previous observations that CVT-grown ZrTe5 is a weak TI in ambient conditions.
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