A review of SRAM-based compute-in-memory circuits

被引:0
|
作者
Yoshioka, Kentaro [1 ]
Ando, Shimpei [1 ]
Miyagi, Satomi [1 ]
Chen, Yung-Chin [1 ]
Zhang, Wenlun [1 ]
机构
[1] Keio University, Department of Electrical and Electronics Engineering, Yagami Campus 3-14-1 Hiyoshi, Kohoku-ku Kanagawa, Yokohama,223-8522, Japan
基金
日本学术振兴会;
关键词
Analog circuits - Digital circuits - Memory architecture - Timing circuits;
D O I
10.35848/1347-4065/ad93e0
中图分类号
学科分类号
摘要
This paper presents a tutorial and review of Static Random Access Memory-based compute-in-memory (CIM) circuits, with a focus on both digital CIM (DCIM) and analog CIM (ACIM) implementations. We explore the fundamental concepts, architectures, and operational principles of CIM technology. The review compares DCIM and ACIM approaches, examining their respective advantages and challenges. DCIM offers high computational precision and process scaling benefits, while ACIM provides superior power and area efficiency, particularly for medium-precision applications. We analyze various ACIM implementations, including current-based, time-based, and charge-based approaches, with a detailed look at charge-based ACIMs. The paper also discusses emerging hybrid CIM architectures that combine DCIM and ACIM to leverage the strengths of both approaches. © 2024 The Author(s). Published on behalf of The Japan Society of Applied Physics by IOP Publishing Ltd.
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