Time performance of Analog Pixel Test Structures with in-chip operational amplifier implemented in 65 nm CMOS imaging process

被引:1
|
作者
Rinella, Gianluca Aglieri
Aglietta, Luca [1 ,2 ]
Antonelli, Matias
Barile, Francesco [9 ,10 ]
Benotto, Franco
Beole, Stefania Maria [1 ,2 ]
Botta, Elena [1 ,2 ]
Bruno, Giuseppe Eugenio [10 ,11 ]
Carnesecchi, Francesca [8 ]
Colella, Domenico [9 ,10 ]
Colelli, Angelo [10 ]
Contin, Giacomo [6 ,7 ]
De Robertis, Giuseppe
Dumitrache, Floarea [2 ]
Elia, Domenico [10 ]
Ferrero, Chiara [2 ,3 ]
Fransen, Martin [13 ]
Kluge, Alex
Kumar, Shyam [10 ]
Lemoine, Corentin [12 ]
Licciulli, Francesco [10 ]
Lim, Bong-Hwi [2 ]
Loddo, Flavio [10 ]
Mager, Magnus [8 ]
Marras, Davide [4 ,5 ]
Martinengo, Paolo [8 ]
Pastore, Cosimo [10 ]
Patra, Rajendra Nath [15 ]
Perciballi, Stefania [1 ,2 ]
Piro, Francesco [8 ]
Prino, Francesco [2 ]
Ramello, Luciano [2 ,14 ]
Ramos, Arianna Grisel Torres
Reidt, Felix
Russo, Roberto [13 ]
Sarritzu, Valerio
Savino, Umberto [1 ,2 ]
Schledewitz, David [16 ]
Selina, Mariia
Senyukov, Serhiy [12 ]
Sitta, Mario [14 ]
Snoeys, Walter [8 ]
Sonneveld, Jory [13 ]
Suljic, Miljenko [8 ]
Triloki, Triloki [10 ]
Turcato, Andrea [1 ,2 ]
机构
[1] Univ Torino, Dept Phys, Turin, Italy
[2] INFN, Sez Torino, Turin, Italy
[3] Polytech Torino, DET Dept, Turin, Italy
[4] Univ Cagliari, Cagliari, Italy
[5] INFN, Sez Cagliari, Cagliari, Italy
[6] Univ Trieste, Trieste, Italy
[7] INFN, Sez Trieste, Trieste, Italy
[8] European Org Nucl Res CERN, Geneva, Switzerland
[9] Univ Bari, Dept Phys, Bari, Italy
[10] INFN, Sez Bari, Bari, Italy
[11] Polytech Bari, Dept Phys DIF, Bari, Italy
[12] Univ Strasbourg, CNRS, IPHC, UMR 7178, Strasbourg, France
[13] Natl Inst Subat Phys Nikhef, Amsterdam, Netherlands
[14] Univ Piemonte Orientale, Vercelli, Italy
[15] Univ Jammu, Dept Phys, Jammu, India
[16] Heidelberg Univ, Heidelberg, Germany
基金
新加坡国家研究基金会;
关键词
Monolithic active pixel sensors; Solid state detectors; Silicon; CMOS; Particle detection; Test beam;
D O I
10.1016/j.nima.2024.170034
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
In the context of the CERN EP R&D on monolithic sensors and the ALICE ITS3 upgrade, the Tower Partners Semiconductor Co (TPSCo) 65 nm process has been qualified for use in high energy physics, and adopted for the ALICE ITS3 upgrade. An Analog Pixel Test Structure (APTS) featuring fast per pixel operational-amplifier-based buffering for a small matrix of four by four pixels, with a sensor with a small collection electrode and a very non-uniform electric field, was designed to allow detailed characterization of the pixel performance in this technology. Several variants of this chip with different pixel designs have been characterized with a 120GeV/c positive hadron beam. This result indicates that the APTS-OA prototype variants with the best performance achieve a time resolution of 63 ps with a detection efficiency exceeding 99% and a spatial resolution of 2 mu m, highlighting the potential of TPSCo 65 nm CMOS imaging technology for high-energy physics and other fields requiring precise time measurement, high detection efficiency, and excellent spatial resolution.
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页数:15
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