Enhancement of tunnel magnetoresistance in fully perpendicular MnGa-based magnetic tunnel junctions with metastable bcc CoMnFe interlayer

被引：0
|
作者：
Kumar, Deepak [1 ]
Kamata, Naoki [1 ,2 ]
Hyeokjin, Kwon [1 ,2 ]
Mizukami, Shigemi [1 ,3 ]
机构：
[1] WPI Advanced Institute for Materials Research, Tohoku University, Katahira 2-1-1, Sendai,980-8577, Japan
[2] Department of Applied Physics, Graduate School of Engineering, Tohoku University, Sendai,980-8579, Japan
[3] Center for Science and Innovation in Spintronics, Tohoku University, Katahira 2-1-1, Sendai,980-8577, Japan
来源：
AIP Advances | 2025年 / 15卷 / 03期
基金：
日本学术振兴会;
关键词：
Antiferromagnetic materials - Barium alloys - Cadmium alloys - Cobalt alloys - Gallium alloys - Iron alloys - Lead alloys - Magnesium alloys - Magnetic after effect - Manganese alloys - Ternary alloys - Thulium alloys - Tunnel junctions;
D O I：
10.1063/9.0000889
中图分类号：
学科分类号：
摘要：
We investigated the tunnel magnetoresistance (TMR) effect in fully perpendicular magnetized MnGa-based magnetic tunnel junctions (MTJs) with CoFeB as the top electrode. In these perpendicular (p)-MTJs, thin metastable body-centered cubic (bcc) CoMnFe alloys are used as an interlayer between the MgO barrier and MnGa layers to enhance the TMR ratio. This study highlights the utility of bcc Co-based alloys, such as CoMnFe, which exhibit antiferromagnetic coupling with MnGa in p-MTJs. The TMR ratios of ∼106% and 110% were observed corresponding to single and double interface p-MTJs, respectively, after annealing at 300 °C, demonstrating the potential of these materials for high-performance spin-transfer torque (STT) devices based on p-MTJs. © 2025 Author(s).
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