Experimental and first-principles investigations of electrical behaviors of CrB-based memristors

被引:0
|
作者
Ding, Bingxin [1 ]
Li, Shiyu [1 ]
Zhang, Xin [1 ]
Jiang, Jiyuan [1 ]
Lian, Xiaojuan [1 ]
Wang, Lei [1 ]
机构
[1] College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing,210023, China
基金
中国国家自然科学基金;
关键词
Borides - Chromium alloys - Chromium compounds - Silver compounds;
D O I
10.35848/1347-4065/adb551
中图分类号
学科分类号
摘要
MBenes, as emerging two-dimensional transition metal borides, have garnered significant attention in nanomaterials, but their application in memristors remains largely unexplored. This study focuses on chromium boride (CrB) in memristor fields, examining its structure and properties through first-principles calculations and simulating Ag ion diffusion within CrB layers. We fabricated an Ag/CrB/TiN memristor, which exhibited stable resistive switching and durability beyond 100 cycles. Our findings confirm the potential of CrB in memristor technology and provide theoretical and experimental support for the future applications of MBenes. © 2025 The Japan Society of Applied Physics. All rights, including for text and data mining, AI training, and similar technologies, are reserved.
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