Insight on Work-Function and Gate Oxide-Engineered Negative-Capacitance TFET for Enhanced Analog/RF Performance and DC Characteristics in High-Frequency Applications

This study presents and examines the feasibility of a dual metal gate ferroelectric germanium heterojunction-based step channel double-gate tunnel field-effect transistor (SC-DMTFET) to eliminate issues pertaining to drive current, subthreshold swing, and leakage current, concurrently decreasing ambipolar behavior resulting from structural similarities between the source and drain ends. Mitigating the consequences of ambipolar effects is the purpose of the study. The performance of the proposed structure was assessed and compared to that of a single metal gate, both with and without a step channel, by utilizing various TCAD simulation parameters. An analysis of the energy diagram, carrier concentration, electric field, drain characteristics, surface potential, and analog/radio frequency (RF) parameters was conducted to evaluate the electrostatic behavior of all the structures. The proposed structure yields minimum OFF current of 2.10 x 10-17 A/mu m and maximum ON current of 2.33 x 10-3 A/mu m. Also, the SC-DMTFET exhibits the highest current ratio of similar or equal to 1014 and the minimum subthreshold slope of 26.17 mV/decade in all designed structures.