Laser-assisted synthesis and modification of 2D materials

被引:1
|
作者
Lee, Yejun [1 ]
Hong, Sunhwa [1 ]
Moon, Issac [1 ]
Kim, Chan-Jin [1 ]
Lee, Yunseok [1 ]
Hong, Byung Hee [1 ,2 ,3 ]
机构
[1] Seoul Natl Univ, Dept Chem, Seoul 08826, South Korea
[2] Adv Inst Convergence Technol, Graphene Res Ctr, Suwon 16229, South Korea
[3] Graphene Sq Inc, Adv Inst Convergence Technol, Suwon 16229, South Korea
基金
新加坡国家研究基金会;
关键词
laser; synthesis; doping; etching; transfer; strain engineering; 2D materials; WAFER-SCALE SYNTHESIS; MOS2; THIN-FILMS; GRAPHENE FILMS; DIRECT-BANDGAP; LARGE-AREA; MONOLAYER MOS2; SILICON; TRANSITION; DEFECTS; SEMICONDUCTORS;
D O I
10.1088/1361-6528/ad892a
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Two-dimensional (2D) materials with unique physical, electronic, and optical properties have been intensively studied to be utilized for the next-generation electronic and optical devices, and the use of laser energy in the synthesis and modification of 2D materials is advantageous due to its convenient and fast fabrication processes as well as selective, controllable, and cost-effective characteristics allowing the precise control in materials properties. This paper summarizes the recent progress in utilizations of laser technology in synthesizing, doping, etching, transfer and strain engineering of 2D materials, which is expected to provide an insight for the future applications across diverse research areas.
引用
收藏
页数:24
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