Position-Sensitive Domain-by-Domain Switchable Ferroelectric Memristor

被引：0

作者：

Risch, Felix ^{[1
]}

Koutsogiannis, Panagiotis ^{[2
,3
]}

Tikhonov, Yuri ^{[4
]}

Razumnaya, Anna G. ^{[5
]}

Magén, César ^{[2
,3
]}

Pardo, José A. ^{[2
,6
,7
]}

Lukyanchuk, Igor ^{[4
]}

Stolichnov, Igor ^{[1
]}

机构：

[1] Nanoelectronic Devices Laboratory (NanoLab), Ecole Polytechnique Fédérale de Lausanne (EPFL), Lausanne,1015, Switzerland

[2] Instituto de Nanociencia y Materiales de Aragón (INMA), CSIC-Universidad de Zaragoza, Zaragoza,50009, Spain

[3] Departamento de Física de la Materia Condensada, Universidad de Zaragoza, Zaragoza,50018, Spain

[4] Laboratory of Condensed Matter Physics, University of Picardie, Amiens,80039, France

[5] Jozef Stefan Institute (JSI), Jamova Cesta 39, Ljubljana,1000, Slovenia

[6] Departamento de Ciencia y Tecnología de Materiales y Fluidos, Universidad de Zaragoza, Zaragoza,50018, Spain

[7] Laboratorio de Microscopías Avanzadas, Universidad de Zaragoza, Campus Río Ebro, Zaragoza,50018, Spain

来源：

ACS Nano | 2025年 / 19卷 / 07期

关键词：

D O I：

10.1021/acsnano.4c14727

中图分类号：

学科分类号：

摘要：

Ferroelectricity

引用

页码：6993 / 7004

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