Advance in high operating temperature HgCdTe infrared detector

被引：0

作者：

Chen J. ^{[1
]}

Xi Z. ^{[2
]}

Qin Q. ^{[1
]}

Deng G. ^{[1
]}

Luo Y. ^{[1
]}

Zhao P. ^{[1
]}

机构：

[1] Kunming Institute of Physics, Kunming

[2] School of Energy and Power Engineering, Huazhong University of Science and Technology, Wuhan

来源：

Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering | 2023年 / 52卷 / 01期

关键词：

HgCdTe; high operating temperature (HOT) detectors; InAsSb; p-on-n;

D O I：

10.3788/IRLA20220462

中图分类号：

学科分类号：

摘要：

High operating temperature (HOT) infrared detector technology is an important branch of the third-generation infrared detector technology. The basic materials that can be used for high operating temperature infrared detectors are mainly Sb based and HgCdTe based. This paper introduces the lasest research progress of high operating temperature infrared focal plane module in Kunming Institute of Physics (KIP). The high operating temperature MCT based detectors developed based on p-on-n technology have reached good performance in the temperature range of 150 K with the NETD less than 20 mK. The weight of MCT 640×512 IDDCA module adapted with high efficiency moving magnet split linear cooler is less than 270 g with the detector length in optical axis direction less than 70 mm (F4). At ambient temperature, the steady power consumption of the module is less than 2.5 Wdc while the cool down time is less than 80 s, audible noise is less than 27 dB and self induced vibration force is less than 1.1 N. MCT HOT modules are now under environmental adaptability and reliability verification and commercial mass production of this detector will be realized after the verification test. © 2023 Chinese Society of Astronautics. All rights reserved.

引用

共 19 条

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