Inorganic Nanoparticles and Interface Layer Synergistically Improve Performance of Near-infrared Organic Photomultiplication Photodetector

被引：0

作者：

Chang M. ^{[1
,2
]}

Shi L. ^{[1
]}

Hua Y. ^{[1
]}

Ji T. ^{[3
]}

Li G. ^{[1
]}

Xu B. ^{[2
]}

Dong H. ^{[2
]}

Cui Y. ^{[1
]}

机构：

[1] College of Electronic Information and Optical Engineering, Taiyuan University of Technology, Taiyuan

[2] Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Taiyuan

[3] College of Physics, Taiyuan University of Technology, Taiyuan

来源：

Faguang Xuebao/Chinese Journal of Luminescence | 2024年 / 45卷 / 06期

关键词：

inorganic nanoparticles; interface modification; near-infrared; organic photodetectors; photomultiplication;

D O I：

10.37188/CJL.20240056

中图分类号：

学科分类号：

摘要：

Novel near-infrared organic photodetectors have wide application prospects in biosensing, medical imaging, and wearable electronics with the advantages of low cost, solution-spin coating, good biocompatibility, and flexible. Compared with diode organic photodetectors, high sensitive photomultiplication organic photodetectors have attracted enormous attention because of their higher external quantum efficiency (EQE>100%). The mechanism of the photomultiplication involves a type of carrier being trapped near the electrode, which assists another opposite polarity carrier tunneling into the active layer from the extra circuit. However, the performances of the device are limited by the number of traps. In this work, inorganic ZnO nanoparticles (NPs) are added into the active layer to enhance the photocurrent of the device through increasing the number of electron traps, and fortunately the dark current density of the device is maintained. It is found that the photocurrent of the device is improved by 7.4 times with optimal 5% ZnO NPs, compared with control device without ZnO NPs, under the reverse bias of -15 V, 850 nm illumination. Besides, the Al2O3 interface modification layer is further inserted into the device to improve performance of the device. The results show that the Al2O3 based device has bi-direction response for both reverse and forward bias via changing the interface contact characteristics near anode. Ultimately, the device obtains high EQE and R up to 105% and 104 A/W at a broad wavelength range of 380-1 310 nm, applied with a forward bias of 15 V. This work provides a new idea and method for the development of high-sensitivity organic photodetectors. © 2024 Editorial Office of Chinese Optics. All rights reserved.

引用

页码：986 / 995

页数：9

共 24 条

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