Design of DC to 40 GHz GaAs-based MMIC Attenuators by Utilizing Full-chip Numerical Analyses

被引：0

作者：

Bayrak, Mehmet Emin ^{[1
]}

Tekin, Harun ^{[1
]}

Savci, Huseyin Serif ^{[1
]}

机构：

[1] Istanbul Medipol Univ, Dept Elect & Elect Engn, TR-34810 Istanbul, Turkiye

来源：

APPLIED COMPUTATIONAL ELECTROMAGNETICS SOCIETY JOURNAL | 2024年 / 39卷 / 07期

关键词：

Finite element method; GaAs inte grated passive device; Method of Moments; monolithic microwave integrated circuit; wideband attenuator;

D O I：

10.13052/2024.ACES.J.390710

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

- In this study, a numerical analysis-based design methodology of monolithic microwave integrated circuit (MMIC) attenuators on a GaAs-based microwave integrated passive device (IPD) technology is presented. dB, 20 dB, and 30 dB attenuation from DC to 40 GHz. The attenuators are designed for a maximum RF power of 26 dBm and a maximum die area of 0.25 mm2. The circuits are physically compact but electrically large. The finite element method and Method of Moments (MoM)based analyses are used. The MoM-based solutions show close correlations with the measurements. The measured return losses are better than 20 dB, and insertion loss variation is less than 0.5 dB across the entire band. This paper explains the detailed design steps and numerical electromagnetic setup to achieve first-pass success.

引用

页码：658 / 667

页数：10

共 2 条

[1] Lithography simulation-based full-chip design analyses
Gupta, Puneet
Kahng, Andrew B.
Nakagawa, Sam
Shah, Saumil
Sharma, Puneet
DESIGN AND PROCESS INTEGRATION FOR MICROELECTRONIC MANUFACTURING IV, 2006, 6156
[2] 40 GHZ broadband optical receiver combining a multimode waveguide photodiode flip-chip mounted on a GaAs-based HEMT distributed amplifier
Leven, A
Hurm, V
Bronner, W
Köhler, K
Walcher, H
Kiefer, R
Fleissner, J
Rosenzweig, J
Schlechtweg, M
2000 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3, 2000, : 683 - 685

← 1 →