Conducting polythiophene;
Graphitic carbon nitride;
Hydrogen gas sensor;
Room temperature sensing;
GAS SENSOR;
SENSING PROPERTIES;
GRAPHENE OXIDE;
NANOCOMPOSITE;
NANOPARTICLES;
SHELL;
PD;
D O I:
10.1016/j.ijhydene.2024.10.073
中图分类号:
O64 [物理化学(理论化学)、化学物理学];
学科分类号:
070304 ;
081704 ;
摘要:
A novel chemi-resistive hydrogen gas sensor was fabricated from polythiophene/graphitic carbon nitride nanocomposite (PTh/g-C3N4) and its hydrogen sensing capability was systematically investigated at room temperature. PTh/g-C3N4 was synthesized by combining thermal exfoliation followed by cost effective in-situ chemical oxidative polymerization method and it was confirmed by spectroscopic and morphological characterization techniques such as FT-IR, XRD, SEM/EDX, TEM, and Raman spectroscopy. The mesoporous architecture of PTh/g-C3N4 nanocomposite offers large surface area and more binding sites as confirmed by BrunauerEmmett-Teller (BET) analysis. This plays a prominent role in upgrading the H2 sensing signal. Specifically, the optimized IDE sensor based on the PTh/g-C3N4 exhibits 5.77 times greater response (29.3% of sensitivity) towards H2 gas compared to the bare g-C3N4 nanosheet (5.07% of sensitivity) under 1 vol% of H2 at room temperature (RT). For both g-C3N4 and PTh/g-C3N4 sensors, the responses are linear and the R-squared correlation coefficient (R2) of the composite based IDE sensor towards 10000 ppm of H2 is 0.9981. The best response time and recovery time of the composite IDE sensor are 83s and 69s at 1 vol% of H2, respectively that is shorter than that of bare g-C3N4 (99s/267s). The outstanding repeatability, good response, and recovery time of the PTh/gC3N4 nanocomposite sensor were mainly due to the win-win choice to combine g-C3N4 and PTh and the formation of a cloudy sheet-like structure with high porosity bestow more active sites to trap hydrogen atoms on the top of the composite. The present attempt is a potential for the use of extremely reliable and effective hydrogen gas sensors for H2 leakage tracing in order to avert any fatal accidents.
机构:
Univ New South Wales, Sch Mat Sci & Engn, Sydney, NSW 2052, AustraliaUniv New South Wales, Sch Mat Sci & Engn, Sydney, NSW 2052, Australia
Guo, Ruiran
Arkhurst, Barton
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机构:
Univ New South Wales, Sch Mat Sci & Engn, Sydney, NSW 2052, AustraliaUniv New South Wales, Sch Mat Sci & Engn, Sydney, NSW 2052, Australia
Arkhurst, Barton
Fan, Xinyue
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Univ New South Wales, Sch Mat Sci & Engn, Sydney, NSW 2052, AustraliaUniv New South Wales, Sch Mat Sci & Engn, Sydney, NSW 2052, Australia
Fan, Xinyue
Lee, Min-wei
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机构:
Natl Cent Univ, Dept Chem & Mat Engn, Taoyuan 32001, TaiwanUniv New South Wales, Sch Mat Sci & Engn, Sydney, NSW 2052, Australia
Lee, Min-wei
Lin, Wen-jui
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Natl Cent Univ, Dept Chem & Mat Engn, Taoyuan 32001, TaiwanUniv New South Wales, Sch Mat Sci & Engn, Sydney, NSW 2052, Australia
Lin, Wen-jui
Shih, Yung-Hsin
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Natl Cent Univ, Dept Chem & Mat Engn, Taoyuan 32001, TaiwanUniv New South Wales, Sch Mat Sci & Engn, Sydney, NSW 2052, Australia
Shih, Yung-Hsin
Rokh, Ghazaleh Bahman
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Univ New South Wales, Sch Mat Sci & Engn, Sydney, NSW 2052, AustraliaUniv New South Wales, Sch Mat Sci & Engn, Sydney, NSW 2052, Australia
Rokh, Ghazaleh Bahman
Li, Honghao
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Univ New South Wales, Sch Mat Sci & Engn, Sydney, NSW 2052, AustraliaUniv New South Wales, Sch Mat Sci & Engn, Sydney, NSW 2052, Australia
Li, Honghao
Sasmita, Sharon
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Univ New South Wales, Sch Mat Sci & Engn, Sydney, NSW 2052, AustraliaUniv New South Wales, Sch Mat Sci & Engn, Sydney, NSW 2052, Australia
Sasmita, Sharon
Zhou, Yifan
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Univ New South Wales, Sch Mat Sci & Engn, Sydney, NSW 2052, AustraliaUniv New South Wales, Sch Mat Sci & Engn, Sydney, NSW 2052, Australia
Zhou, Yifan
Chan, Sammy Lap Ip
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机构:
Univ New South Wales, Sch Mat Sci & Engn, Sydney, NSW 2052, Australia
Natl Cent Univ, Dept Chem & Mat Engn, Taoyuan 32001, TaiwanUniv New South Wales, Sch Mat Sci & Engn, Sydney, NSW 2052, Australia
机构:
Indian Inst Technol Madras, Dept Phys, Alternat Energy & Nanotechnol & Lab, Madras 600036, Tamil Nadu, India
Indian Inst Technol Madras, Dept Phys, Low Temp Phys Lab, Madras 600036, Tamil Nadu, IndiaIndian Inst Technol Madras, Dept Phys, Alternat Energy & Nanotechnol & Lab, Madras 600036, Tamil Nadu, India
Raghu, S.
Santhosh, P. N.
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Indian Inst Technol Madras, Dept Phys, Low Temp Phys Lab, Madras 600036, Tamil Nadu, IndiaIndian Inst Technol Madras, Dept Phys, Alternat Energy & Nanotechnol & Lab, Madras 600036, Tamil Nadu, India
Santhosh, P. N.
Ramaprabhu, S.
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Indian Inst Technol Madras, Dept Phys, Alternat Energy & Nanotechnol & Lab, Madras 600036, Tamil Nadu, IndiaIndian Inst Technol Madras, Dept Phys, Alternat Energy & Nanotechnol & Lab, Madras 600036, Tamil Nadu, India