Nanocrystalline Lanthanum Oxide Layers on Tubes Synthesized Using the Metalorganic Chemical Vapor Deposition Technique

被引:0
|
作者
Sawka, Agata [1 ]
机构
[1] AGH Univ Krakow, Fac Mat Sci & Ceram, al A Mickiewicza 30, PL-30059 Krakow, Poland
关键词
lanthanum oxide layers; MOCVD process; tubular substrates; UV-Vis spectroscopy; THERMAL BARRIER COATINGS; LA2O3; THIN-FILMS; ELECTROLYTE MATERIALS; ELECTRICAL-PROPERTIES; CORROSION-RESISTANCE; SILICON-NITRIDE; ATOMIC LAYER; COMPOSITE; MICROSTRUCTURE; LA;
D O I
10.3390/ma17225539
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Lanthanum oxide (La2O3) layers are widely used in electronics, optics, and optoelectronics due to their properties. Lanthanum oxide is also used as a dopant, modifying and improving the properties of other materials in the form of layers, as well as having a large volume. In this work, lanthanum oxide layers were obtained using MOCVD (Metalorganic Chemical Vapor Deposition) on the inner walls of tubular substrates at 600-750 degrees C. The basic reactant was La(tmhd)3 (tris(2,2,6,6-tetramethyl-3,5-heptanedionato)lanthanum(III)). The evaporation temperature of La(tmhd)3 amounted to 170-200 degrees C. Pure argon (99.9999%) and air were used as the carrier gases. The air was also intended to remove the carbon from the synthesized layers. Tubes of quartz glass were used as the substrates. La2O3 layers were found to be growing on their inner surfaces. The value of the extended Grx/Rex2 criterion, where Gr-Grashof's number, Re-Reynolds' number, x-the distance from the gas inflow point, was below 0.01. The microstructure of the deposited layers of lanthanum oxide was investigated using an electron scanning microscope (SEM). Their chemical composition was analyzed via energy-dispersive X-ray (EDS) analysis. Their phase composition was tested via X-ray diffraction. The transmittance of the layers of lanthanum oxide was determined with the use of UV-Vis spectroscopy. The obtained layers of lanthanum oxide were characterized by a nanocrystalline microstructure and stable cubic structure. They also exhibited good transparency in both ultraviolet (UV) and visible (Vis) light.
引用
收藏
页数:15
相关论文
共 50 条
  • [1] Amorphous gallium oxide nanowires synthesized by metalorganic chemical vapor deposition
    Kim, NH
    Kim, HW
    Seoul, C
    Lee, C
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2004, 111 (2-3): : 131 - 134
  • [2] Characteristics of gallium oxide nanowires synthesized by the metalorganic chemical vapor deposition
    Kim, Hyoun Woo
    Shim, Seung Hyun
    THERMEC 2006, PTS 1-5, 2007, 539-543 : 1230 - +
  • [3] Study of indium oxide rod-like structures synthesized using metalorganic chemical vapor deposition
    Kim, Hyoun Woo
    Shim, Seung Hyun
    THERMEC 2006 SUPPLEMENT: 5TH INTERNATIONAL CONFERENCE ON PROCESSING AND MANUFACTURING OF ADVANCED MATERIALS, 2007, 15-17 : 169 - 174
  • [4] Interface reaction of a silicon substrate and lanthanum oxide films deposited by metalorganic chemical vapor deposition
    Yamada, Hirotoshi
    Shimizu, Takashi
    Suzuki, Eiichi
    1600, Japan Society of Applied Physics (41):
  • [5] Interface reaction of a silicon substrate and lanthanum oxide films deposited by metalorganic chemical vapor deposition
    Yamada, H
    Shimizu, T
    Suzuki, E
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2002, 41 (4A): : L368 - L370
  • [6] GaN homoepitaxial layers grown by metalorganic chemical vapor deposition
    Leszczynski, M
    Beaumont, B
    Frayssinet, E
    Knap, W
    Prystawko, P
    Suski, T
    Grzegory, I
    Porowski, S
    APPLIED PHYSICS LETTERS, 1999, 75 (09) : 1276 - 1278
  • [7] Metalorganic chemical vapor deposition of InGaN layers on ZnO substrates
    Wang, Shen-Jie
    Li, Nola
    Park, Eun-Hyun
    Lien, Siou-Cheng
    Feng, Zhe Chuan
    Valencia, Adriana
    Nause, Jeff
    Ferguson, Ian
    JOURNAL OF APPLIED PHYSICS, 2007, 102 (10)
  • [8] ZnO nanostructures synthesized with/without catalyst by metalorganic chemical vapor deposition
    Jeong, Seong Hun
    Yoo, Dong. -Geun.
    Park, Bit Na
    Boo, Jin-Hyo
    IEEE NMDC 2006: IEEE NANOTECHNOLOGY MATERIALS AND DEVICES CONFERENCE 2006, PROCEEDINGS, 2006, : 680 - 681
  • [9] Reaction mechanism of a lanthanum precursor in liquid source metalorganic chemical vapor deposition
    Nakamura, T
    Nishimura, T
    Tai, R
    Tachibana, K
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2005, 118 (1-3): : 253 - 258
  • [10] Metalorganic chemical vapor deposition of lanthanum aluminate thin films for gate dielectrics
    Li, AD
    Cheng, JB
    Shao, QY
    Ling, HQ
    Wu, D
    Wang, Y
    Wang, M
    Liu, ZG
    Ming, NB
    Wang, C
    Zhou, HW
    Nguyen, B
    FERROELECTRICS, 2005, 329 : 977 - 981