Sufficient Hole Injection for High-Performance Blue Perovskite Light-Emitting Diodes

被引:1
|
作者
Chen, Ran [1 ,2 ]
Chen, Hua [1 ,2 ]
Yu, Yangyang [1 ,2 ]
Luo, Chengzhao [1 ,2 ]
Xu, Chengze [1 ,2 ]
Zhou, Xin [1 ,2 ]
Ren, Zhenwei [1 ,2 ]
Chen, Yu [1 ,2 ,3 ]
机构
[1] Soochow Univ, Sch Optoelect Sci & Engn, Suzhou 215006, Peoples R China
[2] Soochow Univ, Collaborat Innovat Ctr Suzhou Nano Sci & Technol, Suzhou 215006, Peoples R China
[3] Natl Univ Singapore, Dushu Lake Sci & Educ Innovat Dist, Suzhou Res Inst, Suzhou 215123, Peoples R China
来源
ACS PHOTONICS | 2024年 / 11卷 / 12期
基金
中国国家自然科学基金; 国家重点研发计划;
关键词
hole injection; interface layer; nickel oxide; blue perovskitelight-emitting diodes; EFFICIENT;
D O I
10.1021/acsphotonics.4c01767
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Nickel oxide (NiO x ) has been extensively adopted as a promising hole transport material for perovskite light-emitting diodes (PeLEDs). However, its shallow valence band induces a large hole injection barrier for pure-blue PeLEDs with moderate device performances. Herein, an ingenious interface layer of ammonium molybdate (AMM) is proposed to successfully tailor the NiO x energy band for fast hole injection. After careful comparisons with pristine NiO x and conventional MoO3 modification layer, we demonstrate the superior capacity of AMM to precisely tune the valence band of NiO x for efficient hole injection and thus, a balanced charge injection in the devices. As a result, we reveal the favorable energy band of NiO x -AMM for one of the best-performing pure-blue PeLEDs with an impressive efficiency of 9.15% at 473 nm and a high brightness of 5550 cd m-2. More importantly, we demonstrate a remarkably low turn-on voltage of 2.4 V, being the smallest turn-on voltage for pure-blue PeLEDs through a sufficient hole injection. Consequently, this work contributes to a feasible and efficient approach to tailor the NiO x energy band for highly performing pure-blue PeLEDs.
引用
收藏
页码:5380 / 5387
页数:8
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